Kelvin probe and synchrotron radiation study of surface photovoltage and band bending at metal/GaAs (100) interfaces

D. Mao, Antoine Kahn, G. Le Lay, M. Marsi, Y. Hwu, G. Margaritondo

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

Contact potential difference (CPD) measurements using a Kelvin probe coupled with synchrotron radiation are used to investigate the surface photovoltage (SPV) induced by synchrotron radiation at GaAs surfaces. A large and quasi-permanent SPV is found at surfaces of low-doped and low-temperature samples. SPV discharge mechanisms are investigated. The CPD technique is used to define conditions under which SPV is negligible, leading to reliable measurements of band bending at low temperature. Band bending measurements are reported for interfaces between metals and GaAs (100) surfaces.

Original languageEnglish (US)
Pages (from-to)142-150
Number of pages9
JournalApplied Surface Science
Volume56-58
Issue numberPART 1
DOIs
StatePublished - 1992

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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