Kelvin probe and synchrotron radiation study of surface photovoltage and band bending at metal/GaAs (100) interfaces

D. Mao; Antoine Kahn; G. Le Lay; M. Marsi; Y. Hwu; G. Margaritondo

doi:10.1016/0169-4332(92)90227-O

Kelvin probe and synchrotron radiation study of surface photovoltage and band bending at metal/GaAs (100) interfaces

D. Mao, Antoine Kahn, G. Le Lay, M. Marsi, Y. Hwu, G. Margaritondo

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Contact potential difference (CPD) measurements using a Kelvin probe coupled with synchrotron radiation are used to investigate the surface photovoltage (SPV) induced by synchrotron radiation at GaAs surfaces. A large and quasi-permanent SPV is found at surfaces of low-doped and low-temperature samples. SPV discharge mechanisms are investigated. The CPD technique is used to define conditions under which SPV is negligible, leading to reliable measurements of band bending at low temperature. Band bending measurements are reported for interfaces between metals and GaAs (100) surfaces.

Original language	English (US)
Pages (from-to)	142-150
Number of pages	9
Journal	Applied Surface Science
Volume	56-58
Issue number	PART 1
DOIs	https://doi.org/10.1016/0169-4332(92)90227-O
State	Published - 1992

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces, Coatings and Films
Surfaces and Interfaces

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10.1016/0169-4332(92)90227-O

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@article{15f9e633f5ce4d3c95d9038cf7540b77,

title = "Kelvin probe and synchrotron radiation study of surface photovoltage and band bending at metal/GaAs (100) interfaces",

abstract = "Contact potential difference (CPD) measurements using a Kelvin probe coupled with synchrotron radiation are used to investigate the surface photovoltage (SPV) induced by synchrotron radiation at GaAs surfaces. A large and quasi-permanent SPV is found at surfaces of low-doped and low-temperature samples. SPV discharge mechanisms are investigated. The CPD technique is used to define conditions under which SPV is negligible, leading to reliable measurements of band bending at low temperature. Band bending measurements are reported for interfaces between metals and GaAs (100) surfaces.",

author = "D. Mao and Antoine Kahn and {Le Lay}, G. and M. Marsi and Y. Hwu and G. Margaritondo",

note = "Funding Information: This work was supported by a grant of the National Science Foundation (DMR-09531) and by the Office of Naval Research. The assistance of the staff of the NSF-supported Synchrotron Radiation Center is gratefully acknowledged. We are indebted to Prof. Shayegan and Dr. Harbison for providing us with MBE samples.",

year = "1992",

doi = "10.1016/0169-4332(92)90227-O",

language = "English (US)",

volume = "56-58",

pages = "142--150",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

number = "PART 1",

}

TY - JOUR

T1 - Kelvin probe and synchrotron radiation study of surface photovoltage and band bending at metal/GaAs (100) interfaces

AU - Mao, D.

AU - Kahn, Antoine

AU - Le Lay, G.

AU - Marsi, M.

AU - Hwu, Y.

AU - Margaritondo, G.

N1 - Funding Information: This work was supported by a grant of the National Science Foundation (DMR-09531) and by the Office of Naval Research. The assistance of the staff of the NSF-supported Synchrotron Radiation Center is gratefully acknowledged. We are indebted to Prof. Shayegan and Dr. Harbison for providing us with MBE samples.

PY - 1992

Y1 - 1992

N2 - Contact potential difference (CPD) measurements using a Kelvin probe coupled with synchrotron radiation are used to investigate the surface photovoltage (SPV) induced by synchrotron radiation at GaAs surfaces. A large and quasi-permanent SPV is found at surfaces of low-doped and low-temperature samples. SPV discharge mechanisms are investigated. The CPD technique is used to define conditions under which SPV is negligible, leading to reliable measurements of band bending at low temperature. Band bending measurements are reported for interfaces between metals and GaAs (100) surfaces.

AB - Contact potential difference (CPD) measurements using a Kelvin probe coupled with synchrotron radiation are used to investigate the surface photovoltage (SPV) induced by synchrotron radiation at GaAs surfaces. A large and quasi-permanent SPV is found at surfaces of low-doped and low-temperature samples. SPV discharge mechanisms are investigated. The CPD technique is used to define conditions under which SPV is negligible, leading to reliable measurements of band bending at low temperature. Band bending measurements are reported for interfaces between metals and GaAs (100) surfaces.

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U2 - 10.1016/0169-4332(92)90227-O

DO - 10.1016/0169-4332(92)90227-O

M3 - Article

AN - SCOPUS:0003241465

SN - 0169-4332

VL - 56-58

SP - 142

EP - 150

JO - Applied Surface Science

JF - Applied Surface Science

IS - PART 1

ER -

Kelvin probe and synchrotron radiation study of surface photovoltage and band bending at metal/GaAs (100) interfaces

Abstract

All Science Journal Classification (ASJC) codes

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