Island scaling effects on photoluminescence of strained SiGe/Si (100)

Rebecca L. Peterson, Haizhou Yin, J. C. Sturm

Research output: Contribution to journalConference article

Abstract

The fabrication of electronic devices on semiconductor islands is becoming increasingly common because of silicon-on-insulator technology and/or because of strain engineering in compliant substrate approaches. While photoluminescence can be an accurate probe of Ge content and strain, in islands it can be affected by the presence of the island edges. Here we present data and a model showing that for high quality SiGe, edge effects are critical for sizes under ∼20 μm. These effects can be mitigated by regrowing epitaxial silicon to passivate the recombination states on the island edges.

Original languageEnglish (US)
Pages (from-to)133-138
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume809
DOIs
StatePublished - 2004
EventHigh-Mobility Group-IV Materials and Devices - San Francisco, CA, United States
Duration: Apr 13 2004Apr 15 2004

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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