Abstract
A study of the interactions of energetic argon ions with silicon surfaces using molecular dynamics simulations is reported. A dynamic balance between ion-induced damage and recrystallization of the surface is detected. By manipulating ion energy, argon ions are able to both create disordered regions near the surface, and recrystallize these disordered regions.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 419-422 |
| Number of pages | 4 |
| Journal | Pure and Applied Chemistry |
| Volume | 74 |
| Issue number | 3 |
| DOIs | |
| State | Published - 2002 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- General Chemistry
- General Chemical Engineering
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