Ion-induced damage and annealing of silicon. Molecular dynamics simulations

David Humbird, David B. Graves

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

A study of the interactions of energetic argon ions with silicon surfaces using molecular dynamics simulations is reported. A dynamic balance between ion-induced damage and recrystallization of the surface is detected. By manipulating ion energy, argon ions are able to both create disordered regions near the surface, and recrystallize these disordered regions.

Original languageEnglish (US)
Pages (from-to)419-422
Number of pages4
JournalPure and Applied Chemistry
Volume74
Issue number3
DOIs
StatePublished - 2002
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • General Chemical Engineering

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