Abstract
A study of the interactions of energetic argon ions with silicon surfaces using molecular dynamics simulations is reported. A dynamic balance between ion-induced damage and recrystallization of the surface is detected. By manipulating ion energy, argon ions are able to both create disordered regions near the surface, and recrystallize these disordered regions.
Original language | English (US) |
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Pages (from-to) | 419-422 |
Number of pages | 4 |
Journal | Pure and Applied Chemistry |
Volume | 74 |
Issue number | 3 |
DOIs | |
State | Published - 2002 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- General Chemistry
- General Chemical Engineering