Invited paper: Amorphous silicon tft’s with 100-year lifetimes in a clear plastic compatible process for amoleds

James C. Sturm, Bahman Hekmatshoar, Kuni Cherenack, Sigurd Wagner

Research output: Contribution to journalConference article

4 Scopus citations

Abstract

We demonstrate critical elements of a-Si technology on clear plastic for flexible AMOLED applications. First, we show that a-Si TFT’s with gate voltages under 5 V provide sufficient current for OLED pixel brightness of over 1000 cd/m2, with minimum geometries (W/L = 1) for 100 µm × 100 µm pixels. Critical to this result is a clear plastic with the combined properties of high transparency, glass transition temperature in excess of 300oC, and low coefficient of thermal expansion. Second, we show that by engineering the a-Si TFT stack, under the bias conditions for pixel operation, the “half-life” of the TFT (defined as the time for the current to fall by 50% in DC operation) is 10 years for a 280oC process on clear plastic, and at least 100 years for 300oC. This is several orders of magnitude higher than that of common a-Si TFT processes and in general larger than the lifetimes for the 50% decay of the luminescence of the OLED’s themselves. Finally, we provide a framework demonstrating the tradeoff between drive current and TFT stability.

Original languageEnglish (US)
Pages (from-to)979-982
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume40
Issue number1
DOIs
StatePublished - Jan 1 2009
Event2009 Vehicles and Photons Symposium - Dearborn, MI, United States
Duration: Oct 15 2009Oct 16 2009

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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