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Investigation of the high electron affinity molecular dopant f6-tcnnq for hole-transport materials
Fengyu Zhang,
Antoine Kahn
Electrical and Computer Engineering
School of Engineering & Applied Science
Princeton Institute for Computational Science and Engineering
Princeton Institute for the Science and Technology of Materials
Research output
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Contribution to journal
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Article
›
peer-review
51
Scopus citations
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Engineering & Materials Science
Electron affinity
100%
Doping (additives)
57%
Ionization potential
36%
Light absorption
15%
Charge transfer
13%
Amines
12%
Activation energy
10%
Electronic equipment
8%
Temperature
4%
Chemical Compounds
Hole Transport
60%
Doping Material
45%
Ionization Potential
34%
Liquid Film
16%
Absorptivity
16%
Tris
14%
Charge Transfer
11%
Reaction Activation Energy
11%
Conductivity
11%
Amine
10%
Physics & Astronomy
electron affinity
58%
ionization
23%
amines
20%
charge transfer
14%
optical absorption
14%
activation energy
12%
injection
12%
conductivity
11%
energy
10%
electronics
8%
interactions
6%
temperature
5%