Investigation of the early stages of ZnSe epitaxy on GaAs(001) via scanning tunneling microscopy

S. Ahsan, A. Kahn, M. D. Pashley

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Abstract

We present a scanning tunneling microscopy (STM) study of the initial stages of ZnSe deposition on the GaAs(001)-(2 × 4) surface. The deposition of elemental Se and of ZnSe on the bare GaAs surface induces considerable atomic disorder attributed to the Se-As exchange reaction. The deposition of elemental Zn weakens the 2x periodicity of the surface but induces no apparent changes in the STM images of the As dimers. Comparison of STM images of submonolayers of ZnSe on GaAs with and without a Zn pretreatment suggests that Zn reduces the interaction of Se with the GaAs surface.

Original languageEnglish (US)
Pages (from-to)2178-2180
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number15
DOIs
StatePublished - Oct 13 1997

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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