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Investigation of the chemistry and electronic properties of metal/gallium nitride interfaces
C. I. Wu,
A. Kahn
Electrical and Computer Engineering
Princeton Institute for Computational Science and Engineering
Princeton Materials Institute
School of Engineering & Applied Science
Research output
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Contribution to journal
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Article
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peer-review
118
Scopus citations
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Keyphrases
N-GaN
100%
Gallium Nitride
100%
P-GaN
100%
Al-Ti
66%
Wide Band Gap Semiconductors
33%
Al-Mg-Si
33%
Metal Work Function
33%
Metallic Compounds
33%
GaN (0001)
33%
Mg-Al
33%
Low Work Function Metals
33%
High Work Function
33%
Material Science
Gallium Nitride
100%
Metallic Compound
50%
Wide Band Gap Semiconductor
50%