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Investigation of the chemistry and electronic properties of metal/gallium nitride interfaces
C. I. Wu,
A. Kahn
Electrical and Computer Engineering
School of Engineering & Applied Science
Princeton Institute for Computational Science and Engineering
Princeton Institute for the Science and Technology of Materials
Research output
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Contribution to journal
›
Article
›
peer-review
114
Scopus citations
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Engineering & Materials Science
Electronic properties
100%
Gallium nitride
89%
Metals
41%
Nitrogen
39%
Fermi level
37%
Wide band gap semiconductors
36%
Metallic compounds
35%
Metallorganic chemical vapor deposition
33%
Interface states
33%
Surface states
30%
Chemical reactions
21%
Annealing
21%
Temperature
8%
Physics & Astronomy
metal nitrides
90%
gallium nitrides
75%
chemistry
55%
electronics
33%
nitrogen
31%
metals
22%
metalorganic chemical vapor deposition
20%
chemical reactions
19%
broadband
15%
products
13%
annealing
12%
room temperature
11%