Abstract
We used oxide molecular-beam epitaxy in a composition-spread geometry to deposit hexagonal LuFeO3 (h-LuFeO3) thin films with a monotonic variation in the Lu/Fe cation ratio, creating a mosaic of samples that ranged from iron rich to lutetium rich. We characterized the effects of composition variation with x-ray diffraction, atomic force microscopy, scanning transmission electron microscopy, and superconducting quantum interference device magnetometry. After identifying growth conditions leading to stoichiometric film growth, an additional sample was grown with a rotating sample stage. From this stoichiometric sample, we determined stoichiometric h-LuFeO3 to have a TN = 147 K and Ms = 0.018 μB/Fe.
Original language | English (US) |
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Article number | 012106 |
Journal | APL Materials |
Volume | 2 |
Issue number | 1 |
DOIs | |
State | Published - Jan 2014 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- General Materials Science
- General Engineering