Intrinsic electronic transport properties of organic field-effect transitors based on single crystalline tetramethyltetraselenafulvalene

M. S. Nam, A. Ardavan, R. J. Cava, P. M. Chaikin

Research output: Contribution to journalArticlepeer-review

38 Scopus citations

Abstract

The electronic transport properties of organic field-effect transistors (OFET), constructed on the highly anisotropic semiconductor, tetramethyltetraselenafulvalene (TMTSF), were discussed. The results show that transport properties are largely dominated by small polaron formation. An intrinsic hopping mechanism was found to govern the electronic transport in TMTSF OFETs. A maximum mobility of 0.2 cm 2/V s at room temperature was reported.

Original languageEnglish (US)
Pages (from-to)4782-4784
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number23
DOIs
StatePublished - Dec 8 2003

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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