Intrinsic disorder in graphene on transition metal dichalcogenide heterostructures

Matthew Yankowitz, Stefano Larentis, Kyounghwan Kim, Jiamin Xue, Devin McKenzie, Shengqiang Huang, Marina Paggen, Mazhar N. Ali, Robert J. Cava, Emanuel Tutuc, Brian J. LeRoy

Research output: Contribution to journalArticlepeer-review

34 Scopus citations

Abstract

Semiconducting transition metal dichalchogenides (TMDs) are a family of van der Waals bonded materials that have recently received interest as alternative substrates to hexagonal boron nitride (hBN) for graphene, as well as for components in novel graphene-based device heterostructures. We elucidate the local structural and electronic properties of graphene on TMD heterostructures through scanning tunneling microscopy and spectroscopy measurements. We find that crystalline defects intrinsic to TMDs induce substantial electronic scattering and charge carrier density fluctuations in the graphene. These signatures of local disorder explain the significant degradation of graphene device mobilities using TMD substrates, particularly compared to similar graphene on hBN devices.

Original languageEnglish (US)
Pages (from-to)1925-1929
Number of pages5
JournalNano Letters
Volume15
Issue number3
DOIs
StatePublished - Mar 11 2015

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Keywords

  • Scanning tunneling microscopy/spectroscopy
  • defects
  • graphene
  • scattering
  • transition metal dichalchogenides

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