Intrinsic bistability in an optically pumped quantum well structure

A. Zrenner; J. M. Worlock; L. T. Florez; J. P. Harbison; S. A. Lyon

doi:10.1063/1.103093

Intrinsic bistability in an optically pumped quantum well structure

A. Zrenner, J. M. Worlock, L. T. Florez, J. P. Harbison, S. A. Lyon

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Abstract

We describe a new semiconductor heterostructure, configured into a bistable device that can be switched either optically or electrically. The two states between which switching occurs involve very different levels of charge accumulation in a quantum well channel, affecting both the photoluminescence spectrum and the vertical photocurrent. The agents in the switching mechanism appear to be hot carriers.

Original language	English (US)
Pages (from-to)	1763-1765
Number of pages	3
Journal	Applied Physics Letters
Volume	56
Issue number	18
DOIs	https://doi.org/10.1063/1.103093
State	Published - 1990

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.103093

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title = "Intrinsic bistability in an optically pumped quantum well structure",

abstract = "We describe a new semiconductor heterostructure, configured into a bistable device that can be switched either optically or electrically. The two states between which switching occurs involve very different levels of charge accumulation in a quantum well channel, affecting both the photoluminescence spectrum and the vertical photocurrent. The agents in the switching mechanism appear to be hot carriers.",

author = "A. Zrenner and Worlock, {J. M.} and Florez, {L. T.} and Harbison, {J. P.} and Lyon, {S. A.}",

year = "1990",

doi = "10.1063/1.103093",

language = "English (US)",

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pages = "1763--1765",

journal = "Applied Physics Letters",

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T1 - Intrinsic bistability in an optically pumped quantum well structure

AU - Zrenner, A.

AU - Worlock, J. M.

AU - Florez, L. T.

AU - Harbison, J. P.

AU - Lyon, S. A.

PY - 1990

Y1 - 1990

N2 - We describe a new semiconductor heterostructure, configured into a bistable device that can be switched either optically or electrically. The two states between which switching occurs involve very different levels of charge accumulation in a quantum well channel, affecting both the photoluminescence spectrum and the vertical photocurrent. The agents in the switching mechanism appear to be hot carriers.

AB - We describe a new semiconductor heterostructure, configured into a bistable device that can be switched either optically or electrically. The two states between which switching occurs involve very different levels of charge accumulation in a quantum well channel, affecting both the photoluminescence spectrum and the vertical photocurrent. The agents in the switching mechanism appear to be hot carriers.

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U2 - 10.1063/1.103093

DO - 10.1063/1.103093

M3 - Article

AN - SCOPUS:0343541424

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VL - 56

SP - 1763

EP - 1765

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Intrinsic bistability in an optically pumped quantum well structure

Abstract

All Science Journal Classification (ASJC) codes

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