Abstract
We describe a nonresonant tunneling structure that exhibits an intrinsic optoelectronic bistability. Switching in a closed hysteresis loop is controled either by optical excitation or by electrical field. The two states between which switching occurs involve different levels of charge accumulation in a quantum well. The internal positive feedback required for intrinsic bistability arises from a transition between low field vertical transport and hot carrier transport.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 327-330 |
| Number of pages | 4 |
| Journal | Superlattices and Microstructures |
| Volume | 7 |
| Issue number | 4 |
| DOIs | |
| State | Published - 1990 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Condensed Matter Physics
- Electrical and Electronic Engineering
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