Abstract
We describe a nonresonant tunneling structure that exhibits an intrinsic optoelectronic bistability. Switching in a closed hysteresis loop is controled either by optical excitation or by electrical field. The two states between which switching occurs involve different levels of charge accumulation in a quantum well. The internal positive feedback required for intrinsic bistability arises from a transition between low field vertical transport and hot carrier transport.
Original language | English (US) |
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Pages (from-to) | 327-330 |
Number of pages | 4 |
Journal | Superlattices and Microstructures |
Volume | 7 |
Issue number | 4 |
DOIs | |
State | Published - 1990 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Electrical and Electronic Engineering