We describe a nonresonant tunneling structure that exhibits an intrinsic optoelectronic bistability. Switching in a closed hysteresis loop is controled either by optical excitation or by electrical field. The two states between which switching occurs involve different levels of charge accumulation in a quantum well. The internal positive feedback required for intrinsic bistability arises from a transition between low field vertical transport and hot carrier transport.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Electrical and Electronic Engineering