Intersubband transitions in molecular-beam-epitaxy-grown wide band gap II-VI semiconductors

A. Shen; H. Lu; M. C. Tamargo; W. Charles; I. Yokomizo; C. Y. Song; H. C. Liu; S. K. Zhang; X. Zhou; R. R. Alfano; K. J. Franz; Claire F. Gmachl

doi:10.1116/1.2720859

Intersubband transitions in molecular-beam-epitaxy-grown wide band gap II-VI semiconductors

A. Shen, H. Lu, M. C. Tamargo, W. Charles, I. Yokomizo, C. Y. Song, H. C. Liu, S. K. Zhang, X. Zhou, R. R. Alfano, K. J. Franz, Claire F. Gmachl

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4 Scopus citations

Abstract

The authors report the study of intersubband transitions in ZnCdMgSe-based wide band gap II-VI semiconductors. The samples were prepared by molecular beam epitaxy on InP substrates. Both ZnCdSeZnCdMgSe multiple quantum wells and CdSeZnCdMgSe quantum dot multilayer stacks were grown. Strong intersubband absorption was observed in the samples. The results show that these materials are very promising for fabricating intersubband devices in the mid- and near-infrared spectral ranges.

Original language	English (US)
Pages (from-to)	995-998
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	25
Issue number	3
DOIs	https://doi.org/10.1116/1.2720859
State	Published - 2007

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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Shen, A., Lu, H., Tamargo, M. C., Charles, W., Yokomizo, I., Song, C. Y., Liu, H. C., Zhang, S. K., Zhou, X., Alfano, R. R., Franz, K. J., & Gmachl, C. F. (2007). Intersubband transitions in molecular-beam-epitaxy-grown wide band gap II-VI semiconductors. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 25(3), 995-998. https://doi.org/10.1116/1.2720859

@article{904dff05194446129498bdc991c5869e,

title = "Intersubband transitions in molecular-beam-epitaxy-grown wide band gap II-VI semiconductors",

abstract = "The authors report the study of intersubband transitions in ZnCdMgSe-based wide band gap II-VI semiconductors. The samples were prepared by molecular beam epitaxy on InP substrates. Both ZnCdSeZnCdMgSe multiple quantum wells and CdSeZnCdMgSe quantum dot multilayer stacks were grown. Strong intersubband absorption was observed in the samples. The results show that these materials are very promising for fabricating intersubband devices in the mid- and near-infrared spectral ranges.",

author = "A. Shen and H. Lu and Tamargo, {M. C.} and W. Charles and I. Yokomizo and Song, {C. Y.} and Liu, {H. C.} and Zhang, {S. K.} and X. Zhou and Alfano, {R. R.} and Franz, {K. J.} and Gmachl, {Claire F.}",

note = "Funding Information: This work was supported in part by the NSF Grant No. EEC-0540832 (MIRTHE-ERC), by the NASA URC COSI Grant No. NCC-1-03009, and by the Department of Defense Grant No. W911NF-04-01-0023.",

year = "2007",

doi = "10.1116/1.2720859",

language = "English (US)",

volume = "25",

pages = "995--998",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "American Institute of Physics",

number = "3",

}

Shen, A, Lu, H, Tamargo, MC, Charles, W, Yokomizo, I, Song, CY, Liu, HC, Zhang, SK, Zhou, X, Alfano, RR, Franz, KJ & Gmachl, CF 2007, 'Intersubband transitions in molecular-beam-epitaxy-grown wide band gap II-VI semiconductors', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 25, no. 3, pp. 995-998. https://doi.org/10.1116/1.2720859

TY - JOUR

T1 - Intersubband transitions in molecular-beam-epitaxy-grown wide band gap II-VI semiconductors

AU - Shen, A.

AU - Lu, H.

AU - Tamargo, M. C.

AU - Charles, W.

AU - Yokomizo, I.

AU - Song, C. Y.

AU - Liu, H. C.

AU - Zhang, S. K.

AU - Zhou, X.

AU - Alfano, R. R.

AU - Franz, K. J.

AU - Gmachl, Claire F.

N1 - Funding Information: This work was supported in part by the NSF Grant No. EEC-0540832 (MIRTHE-ERC), by the NASA URC COSI Grant No. NCC-1-03009, and by the Department of Defense Grant No. W911NF-04-01-0023.

PY - 2007

Y1 - 2007

N2 - The authors report the study of intersubband transitions in ZnCdMgSe-based wide band gap II-VI semiconductors. The samples were prepared by molecular beam epitaxy on InP substrates. Both ZnCdSeZnCdMgSe multiple quantum wells and CdSeZnCdMgSe quantum dot multilayer stacks were grown. Strong intersubband absorption was observed in the samples. The results show that these materials are very promising for fabricating intersubband devices in the mid- and near-infrared spectral ranges.

AB - The authors report the study of intersubband transitions in ZnCdMgSe-based wide band gap II-VI semiconductors. The samples were prepared by molecular beam epitaxy on InP substrates. Both ZnCdSeZnCdMgSe multiple quantum wells and CdSeZnCdMgSe quantum dot multilayer stacks were grown. Strong intersubband absorption was observed in the samples. The results show that these materials are very promising for fabricating intersubband devices in the mid- and near-infrared spectral ranges.

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U2 - 10.1116/1.2720859

DO - 10.1116/1.2720859

M3 - Article

AN - SCOPUS:34249877921

SN - 1071-1023

VL - 25

SP - 995

EP - 998

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

ER -

Intersubband transitions in molecular-beam-epitaxy-grown wide band gap II-VI semiconductors

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