Intersubband transitions in molecular-beam-epitaxy-grown wide band gap II-VI semiconductors

A. Shen, H. Lu, M. C. Tamargo, W. Charles, I. Yokomizo, C. Y. Song, H. C. Liu, S. K. Zhang, X. Zhou, R. R. Alfano, K. J. Franz, Claire F. Gmachl

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

The authors report the study of intersubband transitions in ZnCdMgSe-based wide band gap II-VI semiconductors. The samples were prepared by molecular beam epitaxy on InP substrates. Both ZnCdSeZnCdMgSe multiple quantum wells and CdSeZnCdMgSe quantum dot multilayer stacks were grown. Strong intersubband absorption was observed in the samples. The results show that these materials are very promising for fabricating intersubband devices in the mid- and near-infrared spectral ranges.

Original languageEnglish (US)
Pages (from-to)995-998
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume25
Issue number3
DOIs
StatePublished - Jun 11 2007

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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