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Intersubband absorption at λ ∼ 2.1 μm in A-plane GaN/AlN multiple quantum wells
C. Gmachl
, Hock M. Ng
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Article
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peer-review
33
Scopus citations
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Dive into the research topics of 'Intersubband absorption at λ ∼ 2.1 μm in A-plane GaN/AlN multiple quantum wells'. Together they form a unique fingerprint.
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Engineering & Materials Science
Semiconductor quantum wells
100%
Molecular beam epitaxy
33%
Light absorption
32%
Sapphire
28%
Polarization
19%
Wavelength
18%
Substrates
15%