Intersubband absorption at λ ∼ 2.1 μm in A-plane GaN/AlN multiple quantum wells

C. Gmachl, Hock M. Ng

Research output: Contribution to journalArticle

29 Scopus citations

Abstract

Intersubband optical absorption at λ ∼ 2.1 μm wavelength in doped 17.5 Å wide GaN quantum wells (QWs) with 51 Å wide intermediate AlN barriers is reported. A ∼600 nm thick GaN template and 15 QWs have been grown by molecular beam epitaxy on S-plane sapphire substrate and display pure A-plane orientation. QWs with A-plane orientation are essentially free from spontaneous polarisation, which is expected to greatly simplify the design of GaN/Al(Ga)N devices employing intersubband transitions.

Original languageEnglish (US)
Pages (from-to)567-569
Number of pages3
JournalElectronics Letters
Volume39
Issue number6
DOIs
StatePublished - Mar 20 2003
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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