Interference-enhanced Raman scattering in strain characterization of ultra-thin strained SiGe and Si films on insulator

Haizhou Yin; K. D. Hobart; S. R. Shieh; R. L. Peterson; T. S. Duffy; J. C. Sturm

doi:10.1557/proc-809-b3.6

Interference-enhanced Raman scattering in strain characterization of ultra-thin strained SiGe and Si films on insulator

Haizhou Yin, K. D. Hobart, S. R. Shieh, R. L. Peterson, T. S. Duffy, J. C. Sturm

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

Interference-enhanced Raman scattering was utilized to characterize strain in ultra-thin strained silicon-germanium (SiGe) and silicon layers on insulator. Strained SiGe and silicon films with thickness ranging from 10 to 30 nm on insulating borophosphorosilicate glass (BPSG) were formed by layer transfer techniques and/or strain manipulation via lateral expansion of strained films. The optical interference of the multiple reflections at the BPSG interfaces can substantially boost the reflectivity at the interfaces. The reflection improves Raman signal from SiGe and/or silicon films by increasing excitation intensity and Raman signal collection in the thin films. With the use of interference-enhanced Raman scattering, strain can be characterized at visible wavelengths for films as thin as 10 nm.

Original language	English (US)
Pages (from-to)	115-120
Number of pages	6
Journal	Materials Research Society Symposium Proceedings
Volume	809
DOIs	https://doi.org/10.1557/proc-809-b3.6
State	Published - 2004
Event	High-Mobility Group-IV Materials and Devices - San Francisco, CA, United States Duration: Apr 13 2004 → Apr 15 2004

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Interference-enhanced Raman scattering in strain characterization of ultra-thin strained SiGe and Si films on insulator",

abstract = "Interference-enhanced Raman scattering was utilized to characterize strain in ultra-thin strained silicon-germanium (SiGe) and silicon layers on insulator. Strained SiGe and silicon films with thickness ranging from 10 to 30 nm on insulating borophosphorosilicate glass (BPSG) were formed by layer transfer techniques and/or strain manipulation via lateral expansion of strained films. The optical interference of the multiple reflections at the BPSG interfaces can substantially boost the reflectivity at the interfaces. The reflection improves Raman signal from SiGe and/or silicon films by increasing excitation intensity and Raman signal collection in the thin films. With the use of interference-enhanced Raman scattering, strain can be characterized at visible wavelengths for films as thin as 10 nm.",

author = "Haizhou Yin and Hobart, {K. D.} and Shieh, {S. R.} and Peterson, {R. L.} and Duffy, {T. S.} and Sturm, {J. C.}",

year = "2004",

doi = "10.1557/proc-809-b3.6",

language = "English (US)",

volume = "809",

pages = "115--120",

journal = "Materials Research Society Symposium Proceedings",

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publisher = "Materials Research Society",

note = "High-Mobility Group-IV Materials and Devices ; Conference date: 13-04-2004 Through 15-04-2004",

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TY - JOUR

T1 - Interference-enhanced Raman scattering in strain characterization of ultra-thin strained SiGe and Si films on insulator

AU - Yin, Haizhou

AU - Hobart, K. D.

AU - Shieh, S. R.

AU - Peterson, R. L.

AU - Duffy, T. S.

AU - Sturm, J. C.

PY - 2004

Y1 - 2004

N2 - Interference-enhanced Raman scattering was utilized to characterize strain in ultra-thin strained silicon-germanium (SiGe) and silicon layers on insulator. Strained SiGe and silicon films with thickness ranging from 10 to 30 nm on insulating borophosphorosilicate glass (BPSG) were formed by layer transfer techniques and/or strain manipulation via lateral expansion of strained films. The optical interference of the multiple reflections at the BPSG interfaces can substantially boost the reflectivity at the interfaces. The reflection improves Raman signal from SiGe and/or silicon films by increasing excitation intensity and Raman signal collection in the thin films. With the use of interference-enhanced Raman scattering, strain can be characterized at visible wavelengths for films as thin as 10 nm.

AB - Interference-enhanced Raman scattering was utilized to characterize strain in ultra-thin strained silicon-germanium (SiGe) and silicon layers on insulator. Strained SiGe and silicon films with thickness ranging from 10 to 30 nm on insulating borophosphorosilicate glass (BPSG) were formed by layer transfer techniques and/or strain manipulation via lateral expansion of strained films. The optical interference of the multiple reflections at the BPSG interfaces can substantially boost the reflectivity at the interfaces. The reflection improves Raman signal from SiGe and/or silicon films by increasing excitation intensity and Raman signal collection in the thin films. With the use of interference-enhanced Raman scattering, strain can be characterized at visible wavelengths for films as thin as 10 nm.

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DO - 10.1557/proc-809-b3.6

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AN - SCOPUS:12744258052

SN - 0272-9172

VL - 809

SP - 115

EP - 120

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

T2 - High-Mobility Group-IV Materials and Devices

Y2 - 13 April 2004 through 15 April 2004

ER -

Interference-enhanced Raman scattering in strain characterization of ultra-thin strained SiGe and Si films on insulator

Abstract

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