Interface states generated by the injection of electrons and holes into SiO2

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

Mechanisms by which electrons and holes injected into the SiO2 of metal-oxide-semiconductor structures produce defects at the SiSiO2 interface are discussed. Both carrier types cause damage, but holes are much more efficient in most oxides. The damage caused by electrons appears immediately, while that caused by holes may take hours or days to become apparent.

Original languageEnglish (US)
Pages (from-to)552-564
Number of pages13
JournalApplied Surface Science
Volume39
Issue number1-4
DOIs
StatePublished - Jan 1 1989

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Fingerprint Dive into the research topics of 'Interface states generated by the injection of electrons and holes into SiO<sub>2</sub>'. Together they form a unique fingerprint.

  • Cite this