Mechanisms by which electrons and holes injected into the SiO2 of metal-oxide-semiconductor structures produce defects at the SiSiO2 interface are discussed. Both carrier types cause damage, but holes are much more efficient in most oxides. The damage caused by electrons appears immediately, while that caused by holes may take hours or days to become apparent.
|Original language||English (US)|
|Number of pages||13|
|Journal||Applied Surface Science|
|State||Published - Jan 1 1989|
All Science Journal Classification (ASJC) codes
- Surfaces, Coatings and Films