Interface states generated by the injection of electrons and holes into SiO2

S. A. Lyon

doi:10.1016/0169-4332(89)90471-6

Interface states generated by the injection of electrons and holes into SiO₂

S. A. Lyon

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Mechanisms by which electrons and holes injected into the SiO₂ of metal-oxide-semiconductor structures produce defects at the SiSiO₂ interface are discussed. Both carrier types cause damage, but holes are much more efficient in most oxides. The damage caused by electrons appears immediately, while that caused by holes may take hours or days to become apparent.

Original language	English (US)
Pages (from-to)	552-564
Number of pages	13
Journal	Applied Surface Science
Volume	39
Issue number	1-4
DOIs	https://doi.org/10.1016/0169-4332(89)90471-6
State	Published - Oct 1989

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces, Coatings and Films
Surfaces and Interfaces

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10.1016/0169-4332(89)90471-6

Cite this

@article{4733ac54fae2455987c888749c208d09,

title = "Interface states generated by the injection of electrons and holes into SiO2",

abstract = "Mechanisms by which electrons and holes injected into the SiO2 of metal-oxide-semiconductor structures produce defects at the SiSiO2 interface are discussed. Both carrier types cause damage, but holes are much more efficient in most oxides. The damage caused by electrons appears immediately, while that caused by holes may take hours or days to become apparent.",

author = "Lyon, {S. A.}",

year = "1989",

month = oct,

doi = "10.1016/0169-4332(89)90471-6",

language = "English (US)",

volume = "39",

pages = "552--564",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - Interface states generated by the injection of electrons and holes into SiO2

AU - Lyon, S. A.

PY - 1989/10

Y1 - 1989/10

N2 - Mechanisms by which electrons and holes injected into the SiO2 of metal-oxide-semiconductor structures produce defects at the SiSiO2 interface are discussed. Both carrier types cause damage, but holes are much more efficient in most oxides. The damage caused by electrons appears immediately, while that caused by holes may take hours or days to become apparent.

AB - Mechanisms by which electrons and holes injected into the SiO2 of metal-oxide-semiconductor structures produce defects at the SiSiO2 interface are discussed. Both carrier types cause damage, but holes are much more efficient in most oxides. The damage caused by electrons appears immediately, while that caused by holes may take hours or days to become apparent.

UR - http://www.scopus.com/inward/record.url?scp=0024749763&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024749763&partnerID=8YFLogxK

U2 - 10.1016/0169-4332(89)90471-6

DO - 10.1016/0169-4332(89)90471-6

M3 - Article

AN - SCOPUS:0024749763

SN - 0169-4332

VL - 39

SP - 552

EP - 564

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1-4

ER -

Interface states generated by the injection of electrons and holes into SiO₂

Abstract

All Science Journal Classification (ASJC) codes

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