Interface state generation in the Si-SiO2 system by photoinjecting electrons from an Al field plate

Stella Pang, S. A. Lyon, Walter C. Johnson

Research output: Contribution to journalArticlepeer-review

22 Scopus citations

Abstract

We observe the generation of interface states in the Si-SiO2 system when electrons are internally photoinjected from an Al field plate and are swept through the oxide by a moderate electric field. Interface states appear immediately at 90 K. The rate of interface state generation caused by photoinjected electrons depends on the oxide thickness and the magnitude of the bias field. The generated interface state density is found to increase as N ss = AQs, where Q is the injected charge and s is generally in the range 0.5-0.7. The generation does not saturate after passage of a total charge of 0.35 C/cm2.

Original languageEnglish (US)
Pages (from-to)709-711
Number of pages3
JournalApplied Physics Letters
Volume40
Issue number8
DOIs
StatePublished - 1982

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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