We observe the generation of interface states in the Si-SiO2 system when electrons are internally photoinjected from an Al field plate and are swept through the oxide by a moderate electric field. Interface states appear immediately at 90 K. The rate of interface state generation caused by photoinjected electrons depends on the oxide thickness and the magnitude of the bias field. The generated interface state density is found to increase as N ss = AQs, where Q is the injected charge and s is generally in the range 0.5-0.7. The generation does not saturate after passage of a total charge of 0.35 C/cm2.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - 1982|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)