Interface electronic properties of organic molecular semiconductors

I. G. Hill, A. Kahn

Research output: Contribution to journalConference articlepeer-review

17 Scopus citations

Abstract

The electronic structure and chemical properties of organic/organic and organic/metal interfaces involving molecular semiconductors are investigated via photoemission spectroscopy. The alignment of electronic levels, electron and hole injection barriers, and interface dipoles are measured for each interface. Chemical reactions and interdiffusion dominate metal-on-organic contacts, whereas organic-on-metal and organic/organic interfaces are more abrupt. The rule of vacuum level alignment, expected to hold for organic molecular interfaces, breaks down for all metal/organic and several organic/organic interfaces, showing that electronic gap states and other interface effects cannot be neglected at these interfaces.

Original languageEnglish (US)
Pages (from-to)168-177
Number of pages10
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3476
StatePublished - Dec 1 1998
EventProceedings of the 1998 Conference on Organic Light-Emitting Materials and Devices II - San Diego, CA, USA
Duration: Jul 21 1998Jul 23 1998

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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