Interdiffusion effects and line broadening of hole intersubband absorption in complex GaAs/AlGaAs quantum well structures

Zoran Ikonić; Oana Malis; Loren N. Pfeiffer; Kenneth W. West; Paul Harrison

doi:10.1063/1.3402289

Interdiffusion effects and line broadening of hole intersubband absorption in complex GaAs/AlGaAs quantum well structures

Zoran Ikonić, Oana Malis, Loren N. Pfeiffer, Kenneth W. West, Paul Harrison

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Detailed modeling of intersubband absorption in p -doped GaAs quantum wells embedded in GaAs/AlAs superlattice barriers is performed. It is shown that a careful analysis of measurements provides valuable information on the structure details, like the extent of interdiffusion and different sources of line broadening, which can be useful for further design of emitters and detectors based on this and other material systems.

Original language	English (US)
Article number	113107
Journal	Journal of Applied Physics
Volume	107
Issue number	11
DOIs	https://doi.org/10.1063/1.3402289
State	Published - Jun 1 2010
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.3402289

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title = "Interdiffusion effects and line broadening of hole intersubband absorption in complex GaAs/AlGaAs quantum well structures",

abstract = "Detailed modeling of intersubband absorption in p -doped GaAs quantum wells embedded in GaAs/AlAs superlattice barriers is performed. It is shown that a careful analysis of measurements provides valuable information on the structure details, like the extent of interdiffusion and different sources of line broadening, which can be useful for further design of emitters and detectors based on this and other material systems.",

author = "Zoran Ikoni{\'c} and Oana Malis and Pfeiffer, {Loren N.} and West, {Kenneth W.} and Paul Harrison",

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T1 - Interdiffusion effects and line broadening of hole intersubband absorption in complex GaAs/AlGaAs quantum well structures

AU - Ikonić, Zoran

AU - Malis, Oana

AU - Pfeiffer, Loren N.

AU - West, Kenneth W.

AU - Harrison, Paul

PY - 2010/6/1

Y1 - 2010/6/1

N2 - Detailed modeling of intersubband absorption in p -doped GaAs quantum wells embedded in GaAs/AlAs superlattice barriers is performed. It is shown that a careful analysis of measurements provides valuable information on the structure details, like the extent of interdiffusion and different sources of line broadening, which can be useful for further design of emitters and detectors based on this and other material systems.

AB - Detailed modeling of intersubband absorption in p -doped GaAs quantum wells embedded in GaAs/AlAs superlattice barriers is performed. It is shown that a careful analysis of measurements provides valuable information on the structure details, like the extent of interdiffusion and different sources of line broadening, which can be useful for further design of emitters and detectors based on this and other material systems.

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Interdiffusion effects and line broadening of hole intersubband absorption in complex GaAs/AlGaAs quantum well structures

Abstract

All Science Journal Classification (ASJC) codes

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