Interband and intersubband transitions in photoexcited mixed type I and type II GaAs/AlAs superlattices

Y. Garini; E. Linder; E. Cohen; D. Gershoni; E. Ehrenfreund; A. Ron; L. N. Pfeiffer

doi:10.1051/jp4:1993546

Interband and intersubband transitions in photoexcited mixed type I and type II GaAs/AlAs superlattices

Y. Garini, E. Linder, E. Cohen, D. Gershoni, E. Ehrenfreund, A. Ron, L. N. Pfeiffer

Research output: Contribution to journal › Conference article › peer-review

Abstract

We present a study of the interband and intersubband transitions in mixed type I and type II GaAs/AlAs superlattices. Depending on the energy and intensity of the exciting (laser) radiation, either excitons in the wide GaAs wells or separate 2DEG and 2DHG are formed in the wide and narrow GaAs wells, respectively. We observe both the direct interband transitions and the inter-well transitions, and identify them by comparison with the calculated conduction and valence subband dispersion relations and resulting spectra. Intersubband transitions of the photoexcited 2DEG are observed as well. Under the application of an external magnetic field, the interband transitions between electron and hole Landau levels are shown to be strongly dependent on the density of the photoexcited 2DEG.

Original language	English (US)
Pages (from-to)	241-244
Number of pages	4
Journal	Journal De Physique. IV : JP
Volume	3
Issue number	5
DOIs	https://doi.org/10.1051/jp4:1993546
State	Published - 1993
Externally published	Yes
Event	Proceedings of the Third International Conference on Optics of Excitons in Confined Systems - Montpellier, Fr Duration: Aug 30 1993 → Sep 2 1993

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1051/jp4:1993546

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title = "Interband and intersubband transitions in photoexcited mixed type I and type II GaAs/AlAs superlattices",

abstract = "We present a study of the interband and intersubband transitions in mixed type I and type II GaAs/AlAs superlattices. Depending on the energy and intensity of the exciting (laser) radiation, either excitons in the wide GaAs wells or separate 2DEG and 2DHG are formed in the wide and narrow GaAs wells, respectively. We observe both the direct interband transitions and the inter-well transitions, and identify them by comparison with the calculated conduction and valence subband dispersion relations and resulting spectra. Intersubband transitions of the photoexcited 2DEG are observed as well. Under the application of an external magnetic field, the interband transitions between electron and hole Landau levels are shown to be strongly dependent on the density of the photoexcited 2DEG.",

author = "Y. Garini and E. Linder and E. Cohen and D. Gershoni and E. Ehrenfreund and A. Ron and Pfeiffer, {L. N.}",

year = "1993",

doi = "10.1051/jp4:1993546",

language = "English (US)",

volume = "3",

pages = "241--244",

journal = "Journal De Physique. IV : JP",

issn = "1155-4339",

publisher = "Springer Verlag",

number = "5",

note = "Proceedings of the Third International Conference on Optics of Excitons in Confined Systems ; Conference date: 30-08-1993 Through 02-09-1993",

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TY - JOUR

T1 - Interband and intersubband transitions in photoexcited mixed type I and type II GaAs/AlAs superlattices

AU - Garini, Y.

AU - Linder, E.

AU - Cohen, E.

AU - Gershoni, D.

AU - Ehrenfreund, E.

AU - Ron, A.

AU - Pfeiffer, L. N.

PY - 1993

Y1 - 1993

N2 - We present a study of the interband and intersubband transitions in mixed type I and type II GaAs/AlAs superlattices. Depending on the energy and intensity of the exciting (laser) radiation, either excitons in the wide GaAs wells or separate 2DEG and 2DHG are formed in the wide and narrow GaAs wells, respectively. We observe both the direct interband transitions and the inter-well transitions, and identify them by comparison with the calculated conduction and valence subband dispersion relations and resulting spectra. Intersubband transitions of the photoexcited 2DEG are observed as well. Under the application of an external magnetic field, the interband transitions between electron and hole Landau levels are shown to be strongly dependent on the density of the photoexcited 2DEG.

AB - We present a study of the interband and intersubband transitions in mixed type I and type II GaAs/AlAs superlattices. Depending on the energy and intensity of the exciting (laser) radiation, either excitons in the wide GaAs wells or separate 2DEG and 2DHG are formed in the wide and narrow GaAs wells, respectively. We observe both the direct interband transitions and the inter-well transitions, and identify them by comparison with the calculated conduction and valence subband dispersion relations and resulting spectra. Intersubband transitions of the photoexcited 2DEG are observed as well. Under the application of an external magnetic field, the interband transitions between electron and hole Landau levels are shown to be strongly dependent on the density of the photoexcited 2DEG.

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DO - 10.1051/jp4:1993546

M3 - Conference article

AN - SCOPUS:0027680498

SN - 1155-4339

VL - 3

SP - 241

EP - 244

JO - Journal De Physique. IV : JP

JF - Journal De Physique. IV : JP

IS - 5

T2 - Proceedings of the Third International Conference on Optics of Excitons in Confined Systems

Y2 - 30 August 1993 through 2 September 1993

ER -

Interband and intersubband transitions in photoexcited mixed type I and type II GaAs/AlAs superlattices

Abstract

All Science Journal Classification (ASJC) codes

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