Interaction of electrons with interface phonons in GaAs/AlAs and GaAs/AlGaAs heterostructures

P. Lugli, P. Bordone, E. Molinari, H. Rucker, A. M. De Paula, A. C. Maciel, J. F. Ryan, M. Shayegan

Research output: Contribution to journalArticle

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Abstract

The interaction of electrons with interface phonons is predicted to be of major importance in narrow quantum wells. Time-integrated Raman measurements of non-equilibrium phonons in GaAs/AlAs structures show strong coupling to AlAs interface modes, in good agreement with theoretical predictions based on a microscopic phonon model. Monte Carlo simulations of time-resolved Raman measurements of interface phonons in GaAs/AlGaAs structures provide further confirmation of this result.

Original languageEnglish (US)
Article number027
Pages (from-to)B116-B119
JournalSemiconductor Science and Technology
Volume7
Issue number3 B
DOIs
StatePublished - 1992

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Lugli, P., Bordone, P., Molinari, E., Rucker, H., De Paula, A. M., Maciel, A. C., Ryan, J. F., & Shayegan, M. (1992). Interaction of electrons with interface phonons in GaAs/AlAs and GaAs/AlGaAs heterostructures. Semiconductor Science and Technology, 7(3 B), B116-B119. [027]. https://doi.org/10.1088/0268-1242/7/3B/027