The interaction of electrons with interface phonons is predicted to be of major importance in narrow quantum wells. Time-integrated Raman measurements of non-equilibrium phonons in GaAs/AlAs structures show strong coupling to AlAs interface modes, in good agreement with theoretical predictions based on a microscopic phonon model. Monte Carlo simulations of time-resolved Raman measurements of interface phonons in GaAs/AlGaAs structures provide further confirmation of this result.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry