Interaction correction to the longitudinal conductivity and Hall resistivity in high-quality two-dimensional GaAs electron and hole systems

C. E. Yasin; T. L. Sobey; A. P. Micolich; W. R. Clarke; A. R. Hamilton; M. Y. Simmons; L. N. Pfeiffer; K. W. West; E. H. Linfield; M. Pepper; D. A. Ritchie

doi:10.1103/PhysRevB.72.241310

Interaction correction to the longitudinal conductivity and Hall resistivity in high-quality two-dimensional GaAs electron and hole systems

C. E. Yasin
, T. L. Sobey
, A. P. Micolich
, W. R. Clarke
, A. R. Hamilton
, M. Y. Simmons
, L. N. Pfeiffer
, K. W. West
, E. H. Linfield
, M. Pepper
, D. A. Ritchie

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

We study the corrections in the low temperature limit to both the longitudinal conductivity and Hall resistivity due to electron-electron interactions in high-quality GaAs systems. Using the recent theory of Zala [Phys. Rev. B 64, 214204 (2001)] we find that the interaction corrections to the conductivity and Hall resistivity are consistent with each other in n-GaAs, although the agreement is not as good in p-GaAs. This suggests that interaction effects can explain the metallic drop in resistivity at B=0 in n-GaAs systems, but more work is required to understand p-GaAs systems.

Original language	English (US)
Article number	241310
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	72
Issue number	24
DOIs	https://doi.org/10.1103/PhysRevB.72.241310
State	Published - Dec 15 2005
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.72.241310

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Yasin, C. E., Sobey, T. L., Micolich, A. P., Clarke, W. R., Hamilton, A. R., Simmons, M. Y., Pfeiffer, L. N., West, K. W., Linfield, E. H., Pepper, M., & Ritchie, D. A. (2005). Interaction correction to the longitudinal conductivity and Hall resistivity in high-quality two-dimensional GaAs electron and hole systems. Physical Review B - Condensed Matter and Materials Physics, 72(24), Article 241310. https://doi.org/10.1103/PhysRevB.72.241310

@article{52e9075fa6e04508aff47b1604b74fa0,

title = "Interaction correction to the longitudinal conductivity and Hall resistivity in high-quality two-dimensional GaAs electron and hole systems",

abstract = "We study the corrections in the low temperature limit to both the longitudinal conductivity and Hall resistivity due to electron-electron interactions in high-quality GaAs systems. Using the recent theory of Zala [Phys. Rev. B 64, 214204 (2001)] we find that the interaction corrections to the conductivity and Hall resistivity are consistent with each other in n-GaAs, although the agreement is not as good in p-GaAs. This suggests that interaction effects can explain the metallic drop in resistivity at B=0 in n-GaAs systems, but more work is required to understand p-GaAs systems.",

author = "Yasin, \{C. E.\} and Sobey, \{T. L.\} and Micolich, \{A. P.\} and Clarke, \{W. R.\} and Hamilton, \{A. R.\} and Simmons, \{M. Y.\} and Pfeiffer, \{L. N.\} and West, \{K. W.\} and Linfield, \{E. H.\} and M. Pepper and Ritchie, \{D. A.\}",

year = "2005",

month = dec,

day = "15",

doi = "10.1103/PhysRevB.72.241310",

language = "English (US)",

volume = "72",

journal = "Physical Review B - Condensed Matter and Materials Physics",

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publisher = "American Physical Society",

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}

Yasin, CE, Sobey, TL, Micolich, AP, Clarke, WR, Hamilton, AR, Simmons, MY, Pfeiffer, LN, West, KW, Linfield, EH, Pepper, M & Ritchie, DA 2005, 'Interaction correction to the longitudinal conductivity and Hall resistivity in high-quality two-dimensional GaAs electron and hole systems', Physical Review B - Condensed Matter and Materials Physics, vol. 72, no. 24, 241310. https://doi.org/10.1103/PhysRevB.72.241310

TY - JOUR

T1 - Interaction correction to the longitudinal conductivity and Hall resistivity in high-quality two-dimensional GaAs electron and hole systems

AU - Yasin, C. E.

AU - Sobey, T. L.

AU - Micolich, A. P.

AU - Clarke, W. R.

AU - Hamilton, A. R.

AU - Simmons, M. Y.

AU - Pfeiffer, L. N.

AU - West, K. W.

AU - Linfield, E. H.

AU - Pepper, M.

AU - Ritchie, D. A.

PY - 2005/12/15

Y1 - 2005/12/15

N2 - We study the corrections in the low temperature limit to both the longitudinal conductivity and Hall resistivity due to electron-electron interactions in high-quality GaAs systems. Using the recent theory of Zala [Phys. Rev. B 64, 214204 (2001)] we find that the interaction corrections to the conductivity and Hall resistivity are consistent with each other in n-GaAs, although the agreement is not as good in p-GaAs. This suggests that interaction effects can explain the metallic drop in resistivity at B=0 in n-GaAs systems, but more work is required to understand p-GaAs systems.

AB - We study the corrections in the low temperature limit to both the longitudinal conductivity and Hall resistivity due to electron-electron interactions in high-quality GaAs systems. Using the recent theory of Zala [Phys. Rev. B 64, 214204 (2001)] we find that the interaction corrections to the conductivity and Hall resistivity are consistent with each other in n-GaAs, although the agreement is not as good in p-GaAs. This suggests that interaction effects can explain the metallic drop in resistivity at B=0 in n-GaAs systems, but more work is required to understand p-GaAs systems.

UR - https://www.scopus.com/pages/publications/29644447176

UR - https://www.scopus.com/pages/publications/29644447176#tab=citedBy

U2 - 10.1103/PhysRevB.72.241310

DO - 10.1103/PhysRevB.72.241310

M3 - Article

AN - SCOPUS:29644447176

SN - 1098-0121

VL - 72

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 24

M1 - 241310

ER -

Interaction correction to the longitudinal conductivity and Hall resistivity in high-quality two-dimensional GaAs electron and hole systems

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