Interaction correction to the longitudinal conductivity and Hall resistivity in high-quality two-dimensional GaAs electron and hole systems

C. E. Yasin; T. L. Sobey; A. P. Micolich; W. R. Clarke; A. R. Hamilton; M. Y. Simmons; L. N. Pfeiffer; K. W. West; E. H. Linfield; M. Pepper; D. A. Ritchie

doi:10.1103/PhysRevB.72.241310

Interaction correction to the longitudinal conductivity and Hall resistivity in high-quality two-dimensional GaAs electron and hole systems

C. E. Yasin, T. L. Sobey, A. P. Micolich, W. R. Clarke, A. R. Hamilton, M. Y. Simmons, L. N. Pfeiffer, K. W. West, E. H. Linfield, M. Pepper, D. A. Ritchie

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12 Scopus citations

Abstract

We study the corrections in the low temperature limit to both the longitudinal conductivity and Hall resistivity due to electron-electron interactions in high-quality GaAs systems. Using the recent theory of Zala [Phys. Rev. B 64, 214204 (2001)] we find that the interaction corrections to the conductivity and Hall resistivity are consistent with each other in n-GaAs, although the agreement is not as good in p-GaAs. This suggests that interaction effects can explain the metallic drop in resistivity at B=0 in n-GaAs systems, but more work is required to understand p-GaAs systems.

Original language	English (US)
Article number	241310
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	72
Issue number	24
DOIs	https://doi.org/10.1103/PhysRevB.72.241310
State	Published - Dec 15 2005
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.72.241310

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Yasin, C. E., Sobey, T. L., Micolich, A. P., Clarke, W. R., Hamilton, A. R., Simmons, M. Y., Pfeiffer, L. N., West, K. W., Linfield, E. H., Pepper, M., & Ritchie, D. A. (2005). Interaction correction to the longitudinal conductivity and Hall resistivity in high-quality two-dimensional GaAs electron and hole systems. Physical Review B - Condensed Matter and Materials Physics, 72(24), Article 241310. https://doi.org/10.1103/PhysRevB.72.241310

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title = "Interaction correction to the longitudinal conductivity and Hall resistivity in high-quality two-dimensional GaAs electron and hole systems",

abstract = "We study the corrections in the low temperature limit to both the longitudinal conductivity and Hall resistivity due to electron-electron interactions in high-quality GaAs systems. Using the recent theory of Zala [Phys. Rev. B 64, 214204 (2001)] we find that the interaction corrections to the conductivity and Hall resistivity are consistent with each other in n-GaAs, although the agreement is not as good in p-GaAs. This suggests that interaction effects can explain the metallic drop in resistivity at B=0 in n-GaAs systems, but more work is required to understand p-GaAs systems.",

author = "Yasin, {C. E.} and Sobey, {T. L.} and Micolich, {A. P.} and Clarke, {W. R.} and Hamilton, {A. R.} and Simmons, {M. Y.} and Pfeiffer, {L. N.} and West, {K. W.} and Linfield, {E. H.} and M. Pepper and Ritchie, {D. A.}",

year = "2005",

month = dec,

day = "15",

doi = "10.1103/PhysRevB.72.241310",

language = "English (US)",

volume = "72",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

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Yasin, CE, Sobey, TL, Micolich, AP, Clarke, WR, Hamilton, AR, Simmons, MY, Pfeiffer, LN, West, KW, Linfield, EH, Pepper, M & Ritchie, DA 2005, 'Interaction correction to the longitudinal conductivity and Hall resistivity in high-quality two-dimensional GaAs electron and hole systems', Physical Review B - Condensed Matter and Materials Physics, vol. 72, no. 24, 241310. https://doi.org/10.1103/PhysRevB.72.241310

TY - JOUR

T1 - Interaction correction to the longitudinal conductivity and Hall resistivity in high-quality two-dimensional GaAs electron and hole systems

AU - Yasin, C. E.

AU - Sobey, T. L.

AU - Micolich, A. P.

AU - Clarke, W. R.

AU - Hamilton, A. R.

AU - Simmons, M. Y.

AU - Pfeiffer, L. N.

AU - West, K. W.

AU - Linfield, E. H.

AU - Pepper, M.

AU - Ritchie, D. A.

PY - 2005/12/15

Y1 - 2005/12/15

N2 - We study the corrections in the low temperature limit to both the longitudinal conductivity and Hall resistivity due to electron-electron interactions in high-quality GaAs systems. Using the recent theory of Zala [Phys. Rev. B 64, 214204 (2001)] we find that the interaction corrections to the conductivity and Hall resistivity are consistent with each other in n-GaAs, although the agreement is not as good in p-GaAs. This suggests that interaction effects can explain the metallic drop in resistivity at B=0 in n-GaAs systems, but more work is required to understand p-GaAs systems.

AB - We study the corrections in the low temperature limit to both the longitudinal conductivity and Hall resistivity due to electron-electron interactions in high-quality GaAs systems. Using the recent theory of Zala [Phys. Rev. B 64, 214204 (2001)] we find that the interaction corrections to the conductivity and Hall resistivity are consistent with each other in n-GaAs, although the agreement is not as good in p-GaAs. This suggests that interaction effects can explain the metallic drop in resistivity at B=0 in n-GaAs systems, but more work is required to understand p-GaAs systems.

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U2 - 10.1103/PhysRevB.72.241310

DO - 10.1103/PhysRevB.72.241310

M3 - Article

AN - SCOPUS:29644447176

SN - 1098-0121

VL - 72

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 24

M1 - 241310

ER -

Interaction correction to the longitudinal conductivity and Hall resistivity in high-quality two-dimensional GaAs electron and hole systems

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