Abstract
We study high-mobility, interacting GaAs bilayer hole systems exhibiting counterflow superfluid transport at total filling-factor ν=1. As the density of the two layers is reduced, making the bilayer more interacting, the counterflow Hall resistivity (ρxy) decreases at a given temperature, while the counterflow longitudinal resistivity (ρxx), which is much larger than ρxy, hardly depends on density. On the other hand, a small imbalance in the layer densities can result in significant changes in ρxx at ν=1, while ρxy remains vanishingly small. Our data suggest that the finite ρxx at ν=1 is a result of mobile vortices in the superfluid created by the ubiquitous disorder in this system.
Original language | English (US) |
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Article number | 081307 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 72 |
Issue number | 8 |
DOIs | |
State | Published - Aug 15 2005 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics