Interacting GaAs bilayer hole systems with layer density imbalance

E. Tutuc, S. Melinte, E. P. De Poortere, R. Pillarisetty, Mansour Shayegan

Research output: Contribution to journalConference article

Abstract

We study interacting GaAs hole bilayers in the limit of zero interlayer tunneling. When the layers have equal density, we observe a phase coherent bilayer quantum Hall state (QHS) at total filling factor ν=1, flanked by a reentrant insulating phase at nearby fillings which suggests the formation of a pinned, bilayer Wigner crystal. As we transfer charge from one layer to another, the phase coherent QHS becomes stronger, while the insulating phase disappears, suggesting that its stability requires the commensurability of the two layers.

Original languageEnglish (US)
Pages (from-to)32-35
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume22
Issue number1-3
DOIs
StatePublished - Apr 1 2004
Event15th International Conference on ELectronic Propreties - Nara, Japan
Duration: Jul 14 2003Jul 18 2003

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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