The integration of a-Si:H and polysilicon thin-film transistors (TFT) on the same substrate in a single silicon layer without laser processing is presented. Only a single extra mask step beyond that for a single type of TFT is required. The critical process steps are the selective crystallization of a-Si:H by patterned plasma exposure and the rehydrogenation of the a-Si:H.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Oct 4 1999|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)