Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon

K. Pangal, J. C. Sturm, S. Wagner

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

The integration of a-Si:H and polysilicon thin-film transistors (TFT) on the same substrate in a single silicon layer without laser processing is presented. Only a single extra mask step beyond that for a single type of TFT is required. The critical process steps are the selective crystallization of a-Si:H by patterned plasma exposure and the rehydrogenation of the a-Si:H.

Original languageEnglish (US)
Pages (from-to)2091-2093
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number14
DOIs
StatePublished - Oct 4 1999

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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