Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon

K. Pangal; J. C. Sturm; S. Wagner

doi:10.1063/1.124926

Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon

K. Pangal, J. C. Sturm, S. Wagner

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16 Scopus citations

Abstract

The integration of a-Si:H and polysilicon thin-film transistors (TFT) on the same substrate in a single silicon layer without laser processing is presented. Only a single extra mask step beyond that for a single type of TFT is required. The critical process steps are the selective crystallization of a-Si:H by patterned plasma exposure and the rehydrogenation of the a-Si:H.

Original language	English (US)
Pages (from-to)	2091-2093
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	14
DOIs	https://doi.org/10.1063/1.124926
State	Published - Oct 4 1999

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.124926

Cite this

@article{e130ab7ad5294745bde224fd93a71686,

title = "Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon",

abstract = "The integration of a-Si:H and polysilicon thin-film transistors (TFT) on the same substrate in a single silicon layer without laser processing is presented. Only a single extra mask step beyond that for a single type of TFT is required. The critical process steps are the selective crystallization of a-Si:H by patterned plasma exposure and the rehydrogenation of the a-Si:H.",

author = "K. Pangal and Sturm, {J. C.} and S. Wagner",

year = "1999",

month = oct,

day = "4",

doi = "10.1063/1.124926",

language = "English (US)",

volume = "75",

pages = "2091--2093",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "14",

}

TY - JOUR

T1 - Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon

AU - Pangal, K.

AU - Sturm, J. C.

AU - Wagner, S.

PY - 1999/10/4

Y1 - 1999/10/4

N2 - The integration of a-Si:H and polysilicon thin-film transistors (TFT) on the same substrate in a single silicon layer without laser processing is presented. Only a single extra mask step beyond that for a single type of TFT is required. The critical process steps are the selective crystallization of a-Si:H by patterned plasma exposure and the rehydrogenation of the a-Si:H.

AB - The integration of a-Si:H and polysilicon thin-film transistors (TFT) on the same substrate in a single silicon layer without laser processing is presented. Only a single extra mask step beyond that for a single type of TFT is required. The critical process steps are the selective crystallization of a-Si:H by patterned plasma exposure and the rehydrogenation of the a-Si:H.

UR - http://www.scopus.com/inward/record.url?scp=0032613365&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032613365&partnerID=8YFLogxK

U2 - 10.1063/1.124926

DO - 10.1063/1.124926

M3 - Article

AN - SCOPUS:0032613365

SN - 0003-6951

VL - 75

SP - 2091

EP - 2093

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon

Abstract

All Science Journal Classification (ASJC) codes

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