Integrated amorphous and polycrystalline silicon TFTs with a single silicon layer

K. Pangal; Y. Chen; J. C. Sturm; S. Wagner

doi:10.1557/proc-557-629

Integrated amorphous and polycrystalline silicon TFTs with a single silicon layer

K. Pangal
, Y. Chen
, J. C. Sturm
, S. Wagner

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Selective exposure of an a-Si:H film to a room temperature hydrogen plasma using a patterned SiN_x capping layer and a subsequent anneal at 600°C, resulted in polycrystalline and amorphous silicon regions in a single silicon layer on the same glass substrate. Top-gate nonself-aligned TFTs were fabricated in both the amorphous and polycrystalline regions with all shared processing steps and no laser processing using a re-hydrogenation step. The TFTs had good characteristics, with field-effect mobilities upto 1.2 cm²/Vs and 15 cm²/Vs for the a-Si:H and the poly-Si TFTs, respectively, and ON/OFF ratios >10⁵ in either case.

Original language	English (US)
Pages (from-to)	629-634
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	557
DOIs	https://doi.org/10.1557/proc-557-629
State	Published - 1999
Event	The 1999 MRS Spring Meeting - Symposium A 'Amorphous and Heterogenous Silicon Thin Films: Fundamentals to Devices' - San Francisco, CA, USA Duration: Apr 5 1999 → Apr 9 1999

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Integrated amorphous and polycrystalline silicon TFTs with a single silicon layer",

abstract = "Selective exposure of an a-Si:H film to a room temperature hydrogen plasma using a patterned SiNx capping layer and a subsequent anneal at 600°C, resulted in polycrystalline and amorphous silicon regions in a single silicon layer on the same glass substrate. Top-gate nonself-aligned TFTs were fabricated in both the amorphous and polycrystalline regions with all shared processing steps and no laser processing using a re-hydrogenation step. The TFTs had good characteristics, with field-effect mobilities upto 1.2 cm2/Vs and 15 cm2/Vs for the a-Si:H and the poly-Si TFTs, respectively, and ON/OFF ratios >105 in either case.",

author = "K. Pangal and Y. Chen and Sturm, \{J. C.\} and S. Wagner",

year = "1999",

doi = "10.1557/proc-557-629",

language = "English (US)",

volume = "557",

pages = "629--634",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "The 1999 MRS Spring Meeting - Symposium A 'Amorphous and Heterogenous Silicon Thin Films: Fundamentals to Devices' ; Conference date: 05-04-1999 Through 09-04-1999",

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TY - JOUR

T1 - Integrated amorphous and polycrystalline silicon TFTs with a single silicon layer

AU - Pangal, K.

AU - Chen, Y.

AU - Sturm, J. C.

AU - Wagner, S.

PY - 1999

Y1 - 1999

N2 - Selective exposure of an a-Si:H film to a room temperature hydrogen plasma using a patterned SiNx capping layer and a subsequent anneal at 600°C, resulted in polycrystalline and amorphous silicon regions in a single silicon layer on the same glass substrate. Top-gate nonself-aligned TFTs were fabricated in both the amorphous and polycrystalline regions with all shared processing steps and no laser processing using a re-hydrogenation step. The TFTs had good characteristics, with field-effect mobilities upto 1.2 cm2/Vs and 15 cm2/Vs for the a-Si:H and the poly-Si TFTs, respectively, and ON/OFF ratios >105 in either case.

AB - Selective exposure of an a-Si:H film to a room temperature hydrogen plasma using a patterned SiNx capping layer and a subsequent anneal at 600°C, resulted in polycrystalline and amorphous silicon regions in a single silicon layer on the same glass substrate. Top-gate nonself-aligned TFTs were fabricated in both the amorphous and polycrystalline regions with all shared processing steps and no laser processing using a re-hydrogenation step. The TFTs had good characteristics, with field-effect mobilities upto 1.2 cm2/Vs and 15 cm2/Vs for the a-Si:H and the poly-Si TFTs, respectively, and ON/OFF ratios >105 in either case.

UR - https://www.scopus.com/pages/publications/0033300315

UR - https://www.scopus.com/pages/publications/0033300315#tab=citedBy

U2 - 10.1557/proc-557-629

DO - 10.1557/proc-557-629

M3 - Conference article

AN - SCOPUS:0033300315

SN - 0272-9172

VL - 557

SP - 629

EP - 634

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - The 1999 MRS Spring Meeting - Symposium A 'Amorphous and Heterogenous Silicon Thin Films: Fundamentals to Devices'

Y2 - 5 April 1999 through 9 April 1999

ER -

Integrated amorphous and polycrystalline silicon TFTs with a single silicon layer

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