Integrated amorphous and polycrystalline silicon TFTs with a single silicon layer

K. Pangal, Y. Chen, J. C. Sturm, S. Wagner

Research output: Contribution to journalConference article

1 Scopus citations

Abstract

Selective exposure of an a-Si:H film to a room temperature hydrogen plasma using a patterned SiNx capping layer and a subsequent anneal at 600°C, resulted in polycrystalline and amorphous silicon regions in a single silicon layer on the same glass substrate. Top-gate nonself-aligned TFTs were fabricated in both the amorphous and polycrystalline regions with all shared processing steps and no laser processing using a re-hydrogenation step. The TFTs had good characteristics, with field-effect mobilities upto 1.2 cm2/Vs and 15 cm2/Vs for the a-Si:H and the poly-Si TFTs, respectively, and ON/OFF ratios >105 in either case.

Original languageEnglish (US)
Pages (from-to)629-634
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume557
DOIs
StatePublished - 1999
EventThe 1999 MRS Spring Meeting - Symposium A 'Amorphous and Heterogenous Silicon Thin Films: Fundamentals to Devices' - San Francisco, CA, USA
Duration: Apr 5 1999Apr 9 1999

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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