Insulator to correlated metal transition in V1-x Mox O2

K. L. Holman, T. M. McQueen, A. J. Williams, T. Klimczuk, P. W. Stephens, H. W. Zandbergen, Q. Xu, F. Ronning, R. J. Cava

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Abstract

Although many materials display the transition from insulating to metallic behavior on doping, only a few, such as VO2, have the right combination of crystal structure and physical properties to serve as model systems. Here we report the electronic and structural characteristics of the insulator to metal transition in V1-x Mox O2, which we have studied over the range 0.0≤x≤0.50 through characterization of the electrical resistivity, magnetic susceptibility, specific heat, and average- and short-range crystal structures. We find that metal-metal pairing exists in small domains in the doped metallic phases and an unexpected phenomenology for the crossover between a Curie-Weiss insulating regime and an intermediate mass metallic regime. An electronic phase diagram is presented.

Original languageEnglish (US)
Article number245114
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume79
Issue number24
DOIs
StatePublished - Jun 15 2009

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Holman, K. L., McQueen, T. M., Williams, A. J., Klimczuk, T., Stephens, P. W., Zandbergen, H. W., Xu, Q., Ronning, F., & Cava, R. J. (2009). Insulator to correlated metal transition in V1-x Mox O2. Physical Review B - Condensed Matter and Materials Physics, 79(24), [245114]. https://doi.org/10.1103/PhysRevB.79.245114