Insulating behavior of dilute two-dimensional holes in GaAs under an in-plane magnetic field

Hwayong Noh, Jongsoo Yoon, Daniel C. Tsui, Mansour Shayegan

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

Insulating resistivity of high mobility dilute two-dimensional holes in GaAs under an in-plane magnetic field exhibits a weak temperature dependence when the carrier density is higher than the critical density of zero-field metal-insulator transition. When the density is below the critical density, the temperature dependence is stronger and exhibits a crossover from the Mott variable range hopping to the Efros-Shklovskii variable range hopping as the field is increased.

Original languageEnglish (US)
Pages (from-to)1-4
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume70
Issue number24
DOIs
StatePublished - Dec 1 2004

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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