Abstract
Insulating resistivity of high mobility dilute two-dimensional holes in GaAs under an in-plane magnetic field exhibits a weak temperature dependence when the carrier density is higher than the critical density of zero-field metal-insulator transition. When the density is below the critical density, the temperature dependence is stronger and exhibits a crossover from the Mott variable range hopping to the Efros-Shklovskii variable range hopping as the field is increased.
Original language | English (US) |
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Article number | 241306 |
Pages (from-to) | 1-4 |
Number of pages | 4 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 70 |
Issue number | 24 |
DOIs | |
State | Published - Dec 2004 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics