Insulating resistivity of high mobility dilute two-dimensional holes in GaAs under an in-plane magnetic field exhibits a weak temperature dependence when the carrier density is higher than the critical density of zero-field metal-insulator transition. When the density is below the critical density, the temperature dependence is stronger and exhibits a crossover from the Mott variable range hopping to the Efros-Shklovskii variable range hopping as the field is increased.
|Original language||English (US)|
|Number of pages||4|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - Dec 1 2004|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics