Abstract
High resolution electron energy loss spectra and work function results are presented for the Si(1 0 0) surface held at 20 K during exposure to O2 and subsequently annealed to 300 K. The loss spectra provide evidence for the presence at 20 K of physisorbed molecular and chemisorbed monatomic oxygen. When the oxygen covered surface is warmed, the physisorbed oxygen evaporates at thkap;35 K. Upon oxygen exposure at 20 K, the work function increases by ≈1.5 eV and decreases only when the surface is annealed above ≈90 K, indicating that certain metastable oxygen species besides the physisorbed molecular oxygen may exist on the surface at low temperatures.
Original language | English (US) |
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Pages (from-to) | 735-738 |
Number of pages | 4 |
Journal | Solid State Communications |
Volume | 77 |
Issue number | 9 |
DOIs | |
State | Published - Mar 1991 |
All Science Journal Classification (ASJC) codes
- General Chemistry
- Condensed Matter Physics
- Materials Chemistry