Initial stages of Schottky-barrier formation of Bi/Si(111) and Bi/Si(100) interfaces

K. Hricovini; G. Le Lay; Antoine Kahn; A. Taleb-Ibrahimi; J. E. Bonnet

doi:10.1016/0169-4332(92)90244-R

Initial stages of Schottky-barrier formation of Bi/Si(111) and Bi/Si(100) interfaces

K. Hricovini
, G. Le Lay
, Antoine Kahn
, A. Taleb-Ibrahimi
, J. E. Bonnet

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We have studied the development of Schottky barrier heights during the initial formation of Bi/Si(100) and Bi(111) interfaces. In the submonolayer regime we have followed the band bending changes using synchrotron radiation core-level spectroscopy. It has been observed that the annealing of the interface can influence the Schottky barrier height. We compare these results with recent measurements on Pb/Si(100) and Pb/Si(111) interfaces.

Original language	English (US)
Pages (from-to)	259-263
Number of pages	5
Journal	Applied Surface Science
Volume	56-58
Issue number	PART 1
DOIs	https://doi.org/10.1016/0169-4332(92)90244-R
State	Published - 1992

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces, Coatings and Films
Surfaces and Interfaces

Access to Document

10.1016/0169-4332(92)90244-R

Cite this

@article{49d44405a6d34e17aca12e5f1f07d8a9,

title = "Initial stages of Schottky-barrier formation of Bi/Si(111) and Bi/Si(100) interfaces",

abstract = "We have studied the development of Schottky barrier heights during the initial formation of Bi/Si(100) and Bi(111) interfaces. In the submonolayer regime we have followed the band bending changes using synchrotron radiation core-level spectroscopy. It has been observed that the annealing of the interface can influence the Schottky barrier height. We compare these results with recent measurements on Pb/Si(100) and Pb/Si(111) interfaces.",

author = "K. Hricovini and \{Le Lay\}, G. and Antoine Kahn and A. Taleb-Ibrahimi and Bonnet, \{J. E.\}",

year = "1992",

doi = "10.1016/0169-4332(92)90244-R",

language = "English (US)",

volume = "56-58",

pages = "259--263",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier BV",

number = "PART 1",

}

TY - JOUR

T1 - Initial stages of Schottky-barrier formation of Bi/Si(111) and Bi/Si(100) interfaces

AU - Hricovini, K.

AU - Le Lay, G.

AU - Kahn, Antoine

AU - Taleb-Ibrahimi, A.

AU - Bonnet, J. E.

PY - 1992

Y1 - 1992

N2 - We have studied the development of Schottky barrier heights during the initial formation of Bi/Si(100) and Bi(111) interfaces. In the submonolayer regime we have followed the band bending changes using synchrotron radiation core-level spectroscopy. It has been observed that the annealing of the interface can influence the Schottky barrier height. We compare these results with recent measurements on Pb/Si(100) and Pb/Si(111) interfaces.

AB - We have studied the development of Schottky barrier heights during the initial formation of Bi/Si(100) and Bi(111) interfaces. In the submonolayer regime we have followed the band bending changes using synchrotron radiation core-level spectroscopy. It has been observed that the annealing of the interface can influence the Schottky barrier height. We compare these results with recent measurements on Pb/Si(100) and Pb/Si(111) interfaces.

UR - https://www.scopus.com/pages/publications/26744470653

UR - https://www.scopus.com/pages/publications/26744470653#tab=citedBy

U2 - 10.1016/0169-4332(92)90244-R

DO - 10.1016/0169-4332(92)90244-R

M3 - Article

AN - SCOPUS:26744470653

SN - 0169-4332

VL - 56-58

SP - 259

EP - 263

JO - Applied Surface Science

JF - Applied Surface Science

IS - PART 1

ER -

Initial stages of Schottky-barrier formation of Bi/Si(111) and Bi/Si(100) interfaces

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this