Initial stages of Schottky-barrier formation of Bi/Si(111) and Bi/Si(100) interfaces

K. Hricovini; G. Le Lay; Antoine Kahn; A. Taleb-Ibrahimi; J. E. Bonnet

doi:10.1016/0169-4332(92)90244-R

Initial stages of Schottky-barrier formation of Bi/Si(111) and Bi/Si(100) interfaces

K. Hricovini, G. Le Lay, Antoine Kahn, A. Taleb-Ibrahimi, J. E. Bonnet

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Abstract

We have studied the development of Schottky barrier heights during the initial formation of Bi/Si(100) and Bi(111) interfaces. In the submonolayer regime we have followed the band bending changes using synchrotron radiation core-level spectroscopy. It has been observed that the annealing of the interface can influence the Schottky barrier height. We compare these results with recent measurements on Pb/Si(100) and Pb/Si(111) interfaces.

Original language	English (US)
Pages (from-to)	259-263
Number of pages	5
Journal	Applied Surface Science
Volume	56-58
Issue number	PART 1
DOIs	https://doi.org/10.1016/0169-4332(92)90244-R
State	Published - 1992

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces, Coatings and Films
Surfaces and Interfaces

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10.1016/0169-4332(92)90244-R

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title = "Initial stages of Schottky-barrier formation of Bi/Si(111) and Bi/Si(100) interfaces",

abstract = "We have studied the development of Schottky barrier heights during the initial formation of Bi/Si(100) and Bi(111) interfaces. In the submonolayer regime we have followed the band bending changes using synchrotron radiation core-level spectroscopy. It has been observed that the annealing of the interface can influence the Schottky barrier height. We compare these results with recent measurements on Pb/Si(100) and Pb/Si(111) interfaces.",

author = "K. Hricovini and {Le Lay}, G. and Antoine Kahn and A. Taleb-Ibrahimi and Bonnet, {J. E.}",

year = "1992",

doi = "10.1016/0169-4332(92)90244-R",

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pages = "259--263",

journal = "Applied Surface Science",

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T1 - Initial stages of Schottky-barrier formation of Bi/Si(111) and Bi/Si(100) interfaces

AU - Hricovini, K.

AU - Le Lay, G.

AU - Kahn, Antoine

AU - Taleb-Ibrahimi, A.

AU - Bonnet, J. E.

PY - 1992

Y1 - 1992

N2 - We have studied the development of Schottky barrier heights during the initial formation of Bi/Si(100) and Bi(111) interfaces. In the submonolayer regime we have followed the band bending changes using synchrotron radiation core-level spectroscopy. It has been observed that the annealing of the interface can influence the Schottky barrier height. We compare these results with recent measurements on Pb/Si(100) and Pb/Si(111) interfaces.

AB - We have studied the development of Schottky barrier heights during the initial formation of Bi/Si(100) and Bi(111) interfaces. In the submonolayer regime we have followed the band bending changes using synchrotron radiation core-level spectroscopy. It has been observed that the annealing of the interface can influence the Schottky barrier height. We compare these results with recent measurements on Pb/Si(100) and Pb/Si(111) interfaces.

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U2 - 10.1016/0169-4332(92)90244-R

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VL - 56-58

SP - 259

EP - 263

JO - Applied Surface Science

JF - Applied Surface Science

IS - PART 1

ER -

Initial stages of Schottky-barrier formation of Bi/Si(111) and Bi/Si(100) interfaces

Abstract

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