Initial stages of Schottky-barrier formation of Bi/Si(111) and Bi/Si(100) interfaces

K. Hricovini, G. Le Lay, Antoine Kahn, A. Taleb-Ibrahimi, J. E. Bonnet

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

We have studied the development of Schottky barrier heights during the initial formation of Bi/Si(100) and Bi(111) interfaces. In the submonolayer regime we have followed the band bending changes using synchrotron radiation core-level spectroscopy. It has been observed that the annealing of the interface can influence the Schottky barrier height. We compare these results with recent measurements on Pb/Si(100) and Pb/Si(111) interfaces.

Original languageEnglish (US)
Pages (from-to)259-263
Number of pages5
JournalApplied Surface Science
Volume56-58
Issue numberPART 1
DOIs
StatePublished - 1992

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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