We have studied the development of Schottky barrier heights during the initial formation of Bi/Si(100) and Bi(111) interfaces. In the submonolayer regime we have followed the band bending changes using synchrotron radiation core-level spectroscopy. It has been observed that the annealing of the interface can influence the Schottky barrier height. We compare these results with recent measurements on Pb/Si(100) and Pb/Si(111) interfaces.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films