Inhomogeneous transport regime in disordered materials

Morrel H. Cohen, Joshua Jortner

Research output: Contribution to journalArticle

141 Scopus citations

Abstract

We propose the existence of an inhomogeneous transport regime in the disordered materials in which a gradual metal-semiconductor transition occurs. This regime is sub-divided into pseudometallic and pseudosemiconducting parts by a percolation threshold. On the basis of an effective-medium theory, we propose that the pseudometallic regime falls in the density range 8.2-9.3 g/cm3 in liquid Hg and in the temperature range 1200°K to below 670°K in liquid Te.

Original languageEnglish (US)
Pages (from-to)699-702
Number of pages4
JournalPhysical review letters
Volume30
Issue number15
DOIs
StatePublished - Jan 1 1973
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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