@inproceedings{1aec8714972043259994cbd3849b168d,
title = "InGaAs/AlInAs quantum cascade laser sources based on intra-cavity second harmonic generation emitting in 2.6-3.6 micron range",
abstract = "We discuss the design and performance of quantum cascade laser sources based on intra-cavity second harmonic generation operating in at wavelengths shorter than 3.7μm. A passive heterostructure tailored for giant optical nonlinearity is integrated on top of an active region and patterned for quasi-phasematching. We demonstrate operation of λ≈3.6μm, λ≈3.0μm, and λ≈2.6μm devices based on lattice-matched and strain-compensated InGaAs/AlInAs/InP materials. Threshold current densities of typical devices with nonlinear sections are only 10-20% higher than that of the reference lasers without the nonlinear section. Our best devices have threshold current density of 2.2kA/cm2 and provide approximately 35μW of second-harmonic output at 2.95μm at room temperature. The second-harmonic conversion efficiency is approximately 100μW/W2. Up to two orders of magnitude higher conversion efficiencies are expected in fully-optimized devices. Keywords:",
keywords = "Giant nonlinear susceptibility, Intersubband, Quantum cascade lasers, Quasi-phase matching, Room temperature, Second harmonic generation, Short wavelength",
author = "Belkin, {M. A.} and M. Jang and Adams, {R. W.} and Chen, {J. X.} and Charles, {W. O.} and C. Gmachl and Cheng, {L. W.} and Choa, {F. S.} and X. Wang and M. Troccoli and A. Vizbaras and M. Anders and C. Grasse and Amann, {M. C.}",
year = "2011",
doi = "10.1117/12.879232",
language = "English (US)",
isbn = "9780819484901",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Novel In-Plane Semiconductor Lasers X",
note = "Novel In-Plane Semiconductor Lasers X ; Conference date: 25-01-2011 Through 28-01-2011",
}