Influence of a parallel magnetic field on the microwave photoconductivity in a high-mobility two-dimensional electron system

C. L. Yang, R. R. Du, L. N. Pfeiffer, K. W. West

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Abstract

Using a two-axis magnet, we have studied experimentally the influence of a parallel magnetic field (B) on microwave-induced resistance oscillations (MIROs) and zero-resistance states (ZRS) previously discovered in a high-mobility two-dimensional electron system. We have observed a strong suppression of MIRO/ZRS by a modest B ∼1 T. In Hall bar samples, magnetoplasmon resonance (MPR) has also been observed concurrently with the MIRO/ZRS. In contrast to the suppression of MIRO/ZRS, the MPR peak is apparently enhanced by B. These findings cannot be explained by a simple modification of single-particle energy spectrum and/or scattering parameters by B.

Original languageEnglish (US)
Article number045315
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume74
Issue number4
DOIs
StatePublished - 2006
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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