Inelastic light scattering in the regimes of the integer and fractional quantum Hall effects

A. Pinczuk, B. S. Dennis, L. N. Pfeiffer, K. W. West

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

Recent resonant inelastic light scattering experiments in the fractional quantum Hall regime highlight the power of the method in studies of election-electron interactions in semiconductors of reduced dimensions. We review here light scattering experiments that determine gap excitations in the regimes of the integer and fractional quantum Hall effects. At integer values of the Landau level filling factor we consider inter-Landau level excitations. In the fractional quantum Hall regime we discuss the determination of long-wavelength gap excitations and spin waves in the incompressible quantum fluid at filling factor 1/3.

Original languageEnglish (US)
Article number003
Pages (from-to)1865-1870
Number of pages6
JournalSemiconductor Science and Technology
Volume9
Issue number11 S
DOIs
StatePublished - 1994
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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