Inelastic light scattering in the regime of the fractional quantum hall effect

A. Pinczuk; B. S. Dennis; D. Heiman; L. N. Pfeiffer; K. W. West

doi:10.1016/0038-1098(92)90304-R

Inelastic light scattering in the regime of the fractional quantum hall effect

A. Pinczuk, B. S. Dennis, D. Heiman, L. N. Pfeiffer, K. W. West

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We report low temperature inelastic light scattering by intersubband excitations in the regime of the fractional quantum Hall effect. In a single GaAs-AlGaAs heterojunction there is a marked dependence on illumination intensity that becomes less pronounced at power densities p ∼ 10^-5 - 10^-6 W/cm². In 250Å single quantum wells there is no significant dependence on illumination for p ≤ 10^-3 W/cm². The energies of intersubband charge-density excitations exhibit red-shifts that are interpreted as changes of electron-electron interactions in the extreme magnetic quantum limit.

Original language	English (US)
Pages (from-to)	103-107
Number of pages	5
Journal	Solid State Communications
Volume	84
Issue number	1-2
DOIs	https://doi.org/10.1016/0038-1098(92)90304-R
State	Published - Oct 1992
Externally published	Yes

All Science Journal Classification (ASJC) codes

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(92)90304-R

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@article{d954daf224dd42bcaaf0111dbaea7bab,

title = "Inelastic light scattering in the regime of the fractional quantum hall effect",

abstract = "We report low temperature inelastic light scattering by intersubband excitations in the regime of the fractional quantum Hall effect. In a single GaAs-AlGaAs heterojunction there is a marked dependence on illumination intensity that becomes less pronounced at power densities p ∼ 10-5 - 10-6 W/cm2. In 250{\AA} single quantum wells there is no significant dependence on illumination for p ≤ 10-3 W/cm2. The energies of intersubband charge-density excitations exhibit red-shifts that are interpreted as changes of electron-electron interactions in the extreme magnetic quantum limit.",

author = "A. Pinczuk and Dennis, {B. S.} and D. Heiman and Pfeiffer, {L. N.} and West, {K. W.}",

year = "1992",

month = oct,

doi = "10.1016/0038-1098(92)90304-R",

language = "English (US)",

volume = "84",

pages = "103--107",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

number = "1-2",

}

TY - JOUR

T1 - Inelastic light scattering in the regime of the fractional quantum hall effect

AU - Pinczuk, A.

AU - Dennis, B. S.

AU - Heiman, D.

AU - Pfeiffer, L. N.

AU - West, K. W.

PY - 1992/10

Y1 - 1992/10

N2 - We report low temperature inelastic light scattering by intersubband excitations in the regime of the fractional quantum Hall effect. In a single GaAs-AlGaAs heterojunction there is a marked dependence on illumination intensity that becomes less pronounced at power densities p ∼ 10-5 - 10-6 W/cm2. In 250Å single quantum wells there is no significant dependence on illumination for p ≤ 10-3 W/cm2. The energies of intersubband charge-density excitations exhibit red-shifts that are interpreted as changes of electron-electron interactions in the extreme magnetic quantum limit.

AB - We report low temperature inelastic light scattering by intersubband excitations in the regime of the fractional quantum Hall effect. In a single GaAs-AlGaAs heterojunction there is a marked dependence on illumination intensity that becomes less pronounced at power densities p ∼ 10-5 - 10-6 W/cm2. In 250Å single quantum wells there is no significant dependence on illumination for p ≤ 10-3 W/cm2. The energies of intersubband charge-density excitations exhibit red-shifts that are interpreted as changes of electron-electron interactions in the extreme magnetic quantum limit.

UR - http://www.scopus.com/inward/record.url?scp=0026941275&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026941275&partnerID=8YFLogxK

U2 - 10.1016/0038-1098(92)90304-R

DO - 10.1016/0038-1098(92)90304-R

M3 - Article

AN - SCOPUS:0026941275

SN - 0038-1098

VL - 84

SP - 103

EP - 107

JO - Solid State Communications

JF - Solid State Communications

IS - 1-2

ER -

Inelastic light scattering in the regime of the fractional quantum hall effect

Abstract

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