Inelastic light scattering in the regime of the fractional quantum hall effect

A. Pinczuk, B. S. Dennis, D. Heiman, L. N. Pfeiffer, K. W. West

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


We report low temperature inelastic light scattering by intersubband excitations in the regime of the fractional quantum Hall effect. In a single GaAs-AlGaAs heterojunction there is a marked dependence on illumination intensity that becomes less pronounced at power densities p ∼ 10-5 - 10-6 W/cm2. In 250Å single quantum wells there is no significant dependence on illumination for p ≤ 10-3 W/cm2. The energies of intersubband charge-density excitations exhibit red-shifts that are interpreted as changes of electron-electron interactions in the extreme magnetic quantum limit.

Original languageEnglish (US)
Pages (from-to)103-107
Number of pages5
JournalSolid State Communications
Issue number1-2
StatePublished - Oct 1992
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • Condensed Matter Physics
  • Materials Chemistry


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