Abstract
Mechanisms of resonant inelastic light scattering by the electron gas are evaluated here for their impact in the current research of semiconductor nanostructures. Recent experiments in the fractonal quantum Hall regime highlight the power of the resonant inelastic light-scattering method in studies of electron-electron interactions in semiconductors of reduced dimensions. These applications follow from its capabilities to measure spin-density and charge-density collective modes as well as excitations that are not predicted by conventional response functions of the electron gas. We consider measurements of inter subb and excitations of two-dimensional systems in GaAs quantum wells and observations of gap excitations in the fractional quantum Hall effect.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 429-442 |
| Number of pages | 14 |
| Journal | Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties |
| Volume | 70 |
| Issue number | 3 |
| DOIs | |
| State | Published - Sep 1994 |
| Externally published | Yes |
All Science Journal Classification (ASJC) codes
- General Chemical Engineering
- General Physics and Astronomy