Inductively coupled, point-of-use plasma abatement of perfluorinated compounds and hydrofluorinated compounds from etch processes utilizing O₂ and H₂O as additive gases

In this study, preliminary testing of an inductively coupled, point-of-use (POU) plasma abatement device was carried out on representative mixtures of CHF₃, CF₄ and Ar exhausted from a commercial, 200 mm medium-density magnetically enhanced reactive ion etcher (MERIE). Fluorocarbon (FC) destruction and removal efficiency (DRE), product distribution, and etch process impact were determined using both water vapor and oxygen as additive gases. Results confirm that POU is technically viable, lower-cost alternative to current thermal or catalytic devices abating FCs from dielectric etch processes within the semiconductor industry.