TY - JOUR
T1 - Induced Density of States model for weakly-interacting organic semiconductor interfaces
AU - Vázquez, H.
AU - Flores, F.
AU - Kahn, Antoine
N1 - Funding Information:
We gratefully acknowledge financial support by the Consejería de Educación de la Comunidad de Madrid, the Universidad Autónoma de Madrid and the Spanish CICYT under projects MAT 2001-0665, MAT 2004-01271 and NAN-2004-09183-C10-07. Support of this work by the National Science Foundation (DMR-0408589) and the New Jersey Center for Organic Optoelectronics (A.K.) is also acknowledged.
PY - 2007
Y1 - 2007
N2 - The Induced Density of Interface States model is revisited and discussed for weakly-interacting organic semiconductor junctions. First, unreactive 'ideal' Au/organic interfaces are analyzed and described as a function of the organic Charge Neutrality Level (CNL) and the slope parameter SMO specific to the case of Au: these values are similar, though not necessarily equal, to those obtained from a fit to reactive and unreactive metal/organic interfaces. Then, using the information provided by the Au/organic cases, we obtain the organic/organic screening parameters and calculate molecular level offsets without any adjustable parameter. The good agreement found between our theoretical results and experimental data for weakly-interacting metal/organic and organic/organic interfaces shows that our analysis in terms of the organic CNL and the corresponding (SMO or SOO) slope parameter provides a consistent and predictive description of the energy level alignment at these interfaces.
AB - The Induced Density of Interface States model is revisited and discussed for weakly-interacting organic semiconductor junctions. First, unreactive 'ideal' Au/organic interfaces are analyzed and described as a function of the organic Charge Neutrality Level (CNL) and the slope parameter SMO specific to the case of Au: these values are similar, though not necessarily equal, to those obtained from a fit to reactive and unreactive metal/organic interfaces. Then, using the information provided by the Au/organic cases, we obtain the organic/organic screening parameters and calculate molecular level offsets without any adjustable parameter. The good agreement found between our theoretical results and experimental data for weakly-interacting metal/organic and organic/organic interfaces shows that our analysis in terms of the organic CNL and the corresponding (SMO or SOO) slope parameter provides a consistent and predictive description of the energy level alignment at these interfaces.
KW - Charge neutrality level
KW - Energy level alignment
KW - Fermi level pinning
KW - Interface states
KW - Metal/organic interface
KW - Organic semiconductor
KW - Organic/organic interface
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U2 - 10.1016/j.orgel.2006.07.006
DO - 10.1016/j.orgel.2006.07.006
M3 - Article
AN - SCOPUS:33847726261
SN - 1566-1199
VL - 8
SP - 241
EP - 248
JO - Organic Electronics
JF - Organic Electronics
IS - 2-3
ER -