Abstract
The Induced Density of Interface States model is revisited and discussed for weakly-interacting organic semiconductor junctions. First, unreactive 'ideal' Au/organic interfaces are analyzed and described as a function of the organic Charge Neutrality Level (CNL) and the slope parameter SMO specific to the case of Au: these values are similar, though not necessarily equal, to those obtained from a fit to reactive and unreactive metal/organic interfaces. Then, using the information provided by the Au/organic cases, we obtain the organic/organic screening parameters and calculate molecular level offsets without any adjustable parameter. The good agreement found between our theoretical results and experimental data for weakly-interacting metal/organic and organic/organic interfaces shows that our analysis in terms of the organic CNL and the corresponding (SMO or SOO) slope parameter provides a consistent and predictive description of the energy level alignment at these interfaces.
Original language | English (US) |
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Pages (from-to) | 241-248 |
Number of pages | 8 |
Journal | Organic Electronics |
Volume | 8 |
Issue number | 2-3 |
DOIs | |
State | Published - 2007 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- General Chemistry
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering
- Biomaterials
Keywords
- Charge neutrality level
- Energy level alignment
- Fermi level pinning
- Interface states
- Metal/organic interface
- Organic semiconductor
- Organic/organic interface