Induced Density of States model for weakly-interacting organic semiconductor interfaces

H. Vázquez, F. Flores, Antoine Kahn

Research output: Contribution to journalArticle

118 Scopus citations

Abstract

The Induced Density of Interface States model is revisited and discussed for weakly-interacting organic semiconductor junctions. First, unreactive 'ideal' Au/organic interfaces are analyzed and described as a function of the organic Charge Neutrality Level (CNL) and the slope parameter SMO specific to the case of Au: these values are similar, though not necessarily equal, to those obtained from a fit to reactive and unreactive metal/organic interfaces. Then, using the information provided by the Au/organic cases, we obtain the organic/organic screening parameters and calculate molecular level offsets without any adjustable parameter. The good agreement found between our theoretical results and experimental data for weakly-interacting metal/organic and organic/organic interfaces shows that our analysis in terms of the organic CNL and the corresponding (SMO or SOO) slope parameter provides a consistent and predictive description of the energy level alignment at these interfaces.

Original languageEnglish (US)
Pages (from-to)241-248
Number of pages8
JournalOrganic Electronics
Volume8
Issue number2-3
DOIs
StatePublished - Jan 1 2007

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Keywords

  • Charge neutrality level
  • Energy level alignment
  • Fermi level pinning
  • Interface states
  • Metal/organic interface
  • Organic semiconductor
  • Organic/organic interface

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