Indium-Doped Crystals of SnSe2

Danrui Ni; Xianghan Xu; Zheyi Zhu; Yasemin Ozbek; Vesna Mikšić Trontl; Chen Yang; Xiao Yang; Alex Louat; Cephise Cacho; N. P. Ong; Pengpeng Zhang; Tonica Valla; Robert J. Cava

doi:10.1021/acs.jpcc.4c02926

Indium-Doped Crystals of SnSe₂

Danrui Ni
, Xianghan Xu
, Zheyi Zhu
, Yasemin Ozbek
, Vesna Mikšić Trontl
, Chen Yang
, Xiao Yang
, Alex Louat
, Cephise Cacho
, N. P. Ong
, Pengpeng Zhang
, Tonica Valla
, Robert J. Cava

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Bulk crystals of undoped and In-doped (on the order of 1%) SnSe₂ were synthesized using a solid-state temperature-gradient method and characterized by diffuse reflection, Raman scattering, ARPES and STM studies. An n-to-p crossover was observed as a function of the indium concentration in Hall measurements at 300 K, but the Seebeck coefficient is n-type at that temperature for all studied indium concentrations. The measured resistivity at 300 K reaches a maximum at the minimum carrier concentration. Our results suggest a multiband semiconducting nature for doped SnSe₂, which provides insight into the exploration of enhanced thermoelectric performance and exotic electric behavior.

Original language	English (US)
Pages (from-to)	11054-11062
Number of pages	9
Journal	Journal of Physical Chemistry C
Volume	128
Issue number	26
DOIs	https://doi.org/10.1021/acs.jpcc.4c02926
State	Published - Jul 4 2024

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
General Energy
Physical and Theoretical Chemistry
Surfaces, Coatings and Films

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10.1021/acs.jpcc.4c02926

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@article{d715924102294d998f4f4042e58ea683,

title = "Indium-Doped Crystals of SnSe2",

abstract = "Bulk crystals of undoped and In-doped (on the order of 1\%) SnSe2 were synthesized using a solid-state temperature-gradient method and characterized by diffuse reflection, Raman scattering, ARPES and STM studies. An n-to-p crossover was observed as a function of the indium concentration in Hall measurements at 300 K, but the Seebeck coefficient is n-type at that temperature for all studied indium concentrations. The measured resistivity at 300 K reaches a maximum at the minimum carrier concentration. Our results suggest a multiband semiconducting nature for doped SnSe2, which provides insight into the exploration of enhanced thermoelectric performance and exotic electric behavior.",

author = "Danrui Ni and Xianghan Xu and Zheyi Zhu and Yasemin Ozbek and \{Mik{\v s}i{\'c} Trontl\}, Vesna and Chen Yang and Xiao Yang and Alex Louat and Cephise Cacho and Ong, \{N. P.\} and Pengpeng Zhang and Tonica Valla and Cava, \{Robert J.\}",

note = "Publisher Copyright: {\textcopyright} 2024 American Chemical Society.",

year = "2024",

month = jul,

day = "4",

doi = "10.1021/acs.jpcc.4c02926",

language = "English (US)",

volume = "128",

pages = "11054--11062",

journal = "Journal of Physical Chemistry C",

issn = "1932-7447",

publisher = "American Chemical Society",

number = "26",

}

TY - JOUR

T1 - Indium-Doped Crystals of SnSe2

AU - Ni, Danrui

AU - Xu, Xianghan

AU - Zhu, Zheyi

AU - Ozbek, Yasemin

AU - Mikšić Trontl, Vesna

AU - Yang, Chen

AU - Yang, Xiao

AU - Louat, Alex

AU - Cacho, Cephise

AU - Ong, N. P.

AU - Zhang, Pengpeng

AU - Valla, Tonica

AU - Cava, Robert J.

PY - 2024/7/4

Y1 - 2024/7/4

N2 - Bulk crystals of undoped and In-doped (on the order of 1%) SnSe2 were synthesized using a solid-state temperature-gradient method and characterized by diffuse reflection, Raman scattering, ARPES and STM studies. An n-to-p crossover was observed as a function of the indium concentration in Hall measurements at 300 K, but the Seebeck coefficient is n-type at that temperature for all studied indium concentrations. The measured resistivity at 300 K reaches a maximum at the minimum carrier concentration. Our results suggest a multiband semiconducting nature for doped SnSe2, which provides insight into the exploration of enhanced thermoelectric performance and exotic electric behavior.

AB - Bulk crystals of undoped and In-doped (on the order of 1%) SnSe2 were synthesized using a solid-state temperature-gradient method and characterized by diffuse reflection, Raman scattering, ARPES and STM studies. An n-to-p crossover was observed as a function of the indium concentration in Hall measurements at 300 K, but the Seebeck coefficient is n-type at that temperature for all studied indium concentrations. The measured resistivity at 300 K reaches a maximum at the minimum carrier concentration. Our results suggest a multiband semiconducting nature for doped SnSe2, which provides insight into the exploration of enhanced thermoelectric performance and exotic electric behavior.

UR - https://www.scopus.com/pages/publications/85196620027

UR - https://www.scopus.com/pages/publications/85196620027#tab=citedBy

U2 - 10.1021/acs.jpcc.4c02926

DO - 10.1021/acs.jpcc.4c02926

M3 - Article

AN - SCOPUS:85196620027

SN - 1932-7447

VL - 128

SP - 11054

EP - 11062

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

IS - 26

ER -

Indium-Doped Crystals of SnSe₂

Abstract

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