Indacenodithiophene semiconducting polymers for high-performance, air-stable transistors

Weimin Zhang; Jeremy Smith; Scott E. Watkins; Roman Gysel; Michael McGehee; Alberto Salleo; James Kirkpatrick; Shahid Ashraf; Thomas Anthopoulos; Martin Heeney; Iain McCulloch

doi:10.1021/ja1049324

Indacenodithiophene semiconducting polymers for high-performance, air-stable transistors

Weimin Zhang, Jeremy Smith, Scott E. Watkins, Roman Gysel, Michael McGehee, Alberto Salleo, James Kirkpatrick, Shahid Ashraf, Thomas Anthopoulos, Martin Heeney, Iain McCulloch

Research output: Contribution to journal › Article › peer-review

560 Scopus citations

Abstract

High-performance, solution-processed transistors fabricated from semiconducting polymers containing indacenodithiohene repeat units are described. The bridging functions on the backbone contribute to suppressing large-scale crystallization in thin films. However, charge carrier mobilities of up to 1 cm²/(V s) for a benzothiadiazole copolymer were reported and, coupled with both ambient stability and long-wavelength absorption, make this family of polymers particularly attractive for application in next-generation organic optoelectronics.

Original language	English (US)
Pages (from-to)	11437-11439
Number of pages	3
Journal	Journal of the American Chemical Society
Volume	132
Issue number	33
DOIs	https://doi.org/10.1021/ja1049324
State	Published - Aug 25 2010
Externally published	Yes

All Science Journal Classification (ASJC) codes

Catalysis
General Chemistry
Biochemistry
Colloid and Surface Chemistry

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10.1021/ja1049324

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@article{8fb4c24f714a440a92fbba969c99b84e,

title = "Indacenodithiophene semiconducting polymers for high-performance, air-stable transistors",

abstract = "High-performance, solution-processed transistors fabricated from semiconducting polymers containing indacenodithiohene repeat units are described. The bridging functions on the backbone contribute to suppressing large-scale crystallization in thin films. However, charge carrier mobilities of up to 1 cm2/(V s) for a benzothiadiazole copolymer were reported and, coupled with both ambient stability and long-wavelength absorption, make this family of polymers particularly attractive for application in next-generation organic optoelectronics.",

author = "Weimin Zhang and Jeremy Smith and Watkins, \{Scott E.\} and Roman Gysel and Michael McGehee and Alberto Salleo and James Kirkpatrick and Shahid Ashraf and Thomas Anthopoulos and Martin Heeney and Iain McCulloch",

year = "2010",

month = aug,

day = "25",

doi = "10.1021/ja1049324",

language = "English (US)",

volume = "132",

pages = "11437--11439",

journal = "Journal of the American Chemical Society",

issn = "0002-7863",

publisher = "American Chemical Society",

number = "33",

}

TY - JOUR

T1 - Indacenodithiophene semiconducting polymers for high-performance, air-stable transistors

AU - Zhang, Weimin

AU - Smith, Jeremy

AU - Watkins, Scott E.

AU - Gysel, Roman

AU - McGehee, Michael

AU - Salleo, Alberto

AU - Kirkpatrick, James

AU - Ashraf, Shahid

AU - Anthopoulos, Thomas

AU - Heeney, Martin

AU - McCulloch, Iain

PY - 2010/8/25

Y1 - 2010/8/25

N2 - High-performance, solution-processed transistors fabricated from semiconducting polymers containing indacenodithiohene repeat units are described. The bridging functions on the backbone contribute to suppressing large-scale crystallization in thin films. However, charge carrier mobilities of up to 1 cm2/(V s) for a benzothiadiazole copolymer were reported and, coupled with both ambient stability and long-wavelength absorption, make this family of polymers particularly attractive for application in next-generation organic optoelectronics.

AB - High-performance, solution-processed transistors fabricated from semiconducting polymers containing indacenodithiohene repeat units are described. The bridging functions on the backbone contribute to suppressing large-scale crystallization in thin films. However, charge carrier mobilities of up to 1 cm2/(V s) for a benzothiadiazole copolymer were reported and, coupled with both ambient stability and long-wavelength absorption, make this family of polymers particularly attractive for application in next-generation organic optoelectronics.

UR - https://www.scopus.com/pages/publications/77955789540

UR - https://www.scopus.com/inward/citedby.url?scp=77955789540&partnerID=8YFLogxK

U2 - 10.1021/ja1049324

DO - 10.1021/ja1049324

M3 - Article

C2 - 20677750

AN - SCOPUS:77955789540

SN - 0002-7863

VL - 132

SP - 11437

EP - 11439

JO - Journal of the American Chemical Society

JF - Journal of the American Chemical Society

IS - 33

ER -

Indacenodithiophene semiconducting polymers for high-performance, air-stable transistors

Abstract

All Science Journal Classification (ASJC) codes

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