Increased Drain Saturation Current in Ultrathin Silicon-on-Insulator (SOI) MOS Transistors

James C. Sturm; K. Tokunaga; Jean Pierre Colinge

doi:10.1109/55.6945

Increased Drain Saturation Current in Ultrathin Silicon-on-Insulator (SOI) MOS Transistors

James C. Sturm
, K. Tokunaga
, Jean Pierre Colinge

Research output: Contribution to journal › Article › peer-review

75 Scopus citations

Abstract

Based on considerations of substrate charge, an increased drain saturation current for MOS transistors in Ultrathin silicon-on-insulator (SOI) films is predicted compared to similar transistors in bulk or thick SOI films. For typical parameters of a 200-A gate oxide with a channel doping of 4 x 1016 cm-3, the drain saturation current in Ultrathin SOI transistors is predicted to be ~40 percent larger than that of bulk structures. An increase of ~30 percent is seen in measurements made on devices in 1000-A SOI films.

Original language	English (US)
Pages (from-to)	460-463
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	9
Issue number	9
DOIs	https://doi.org/10.1109/55.6945
State	Published - Sep 1988

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/55.6945

Cite this

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title = "Increased Drain Saturation Current in Ultrathin Silicon-on-Insulator (SOI) MOS Transistors",

abstract = "Based on considerations of substrate charge, an increased drain saturation current for MOS transistors in Ultrathin silicon-on-insulator (SOI) films is predicted compared to similar transistors in bulk or thick SOI films. For typical parameters of a 200-A gate oxide with a channel doping of 4 x 1016 cm-3, the drain saturation current in Ultrathin SOI transistors is predicted to be \textasciitilde{}40 percent larger than that of bulk structures. An increase of \textasciitilde{}30 percent is seen in measurements made on devices in 1000-A SOI films.",

author = "Sturm, \{James C.\} and K. Tokunaga and Colinge, \{Jean Pierre\}",

note = "Funding Information: Manuscript received May 16, 1988; revised July 5, 1988. This work was supported by the National Science Foundation (PYI), the N. J. Commission on Science and Technology, Hewlett-Packard, Emerson Electric (Lawrence Keyes Award), and Rucker \& Kolls. J. C. Sturm is with the Department of Electrical Engineering, Princeton University, Princeton, NJ 08544. K. Tokunaga is with the Department of Electrical Engineering, Princeton University, Princeton, NJ 08544 on leave from Hitachi Musashi Works, Tokyo 187, Japan. J.-P. Colinge is with Hewlett-Packard Laboratories, Palo Alto, CA 94305. IEEE Log Number 8823108.",

year = "1988",

month = sep,

doi = "10.1109/55.6945",

language = "English (US)",

volume = "9",

pages = "460--463",

journal = "IEEE Electron Device Letters",

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AU - Colinge, Jean Pierre

N1 - Funding Information: Manuscript received May 16, 1988; revised July 5, 1988. This work was supported by the National Science Foundation (PYI), the N. J. Commission on Science and Technology, Hewlett-Packard, Emerson Electric (Lawrence Keyes Award), and Rucker & Kolls. J. C. Sturm is with the Department of Electrical Engineering, Princeton University, Princeton, NJ 08544. K. Tokunaga is with the Department of Electrical Engineering, Princeton University, Princeton, NJ 08544 on leave from Hitachi Musashi Works, Tokyo 187, Japan. J.-P. Colinge is with Hewlett-Packard Laboratories, Palo Alto, CA 94305. IEEE Log Number 8823108.

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N2 - Based on considerations of substrate charge, an increased drain saturation current for MOS transistors in Ultrathin silicon-on-insulator (SOI) films is predicted compared to similar transistors in bulk or thick SOI films. For typical parameters of a 200-A gate oxide with a channel doping of 4 x 1016 cm-3, the drain saturation current in Ultrathin SOI transistors is predicted to be ~40 percent larger than that of bulk structures. An increase of ~30 percent is seen in measurements made on devices in 1000-A SOI films.

AB - Based on considerations of substrate charge, an increased drain saturation current for MOS transistors in Ultrathin silicon-on-insulator (SOI) films is predicted compared to similar transistors in bulk or thick SOI films. For typical parameters of a 200-A gate oxide with a channel doping of 4 x 1016 cm-3, the drain saturation current in Ultrathin SOI transistors is predicted to be ~40 percent larger than that of bulk structures. An increase of ~30 percent is seen in measurements made on devices in 1000-A SOI films.

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Increased Drain Saturation Current in Ultrathin Silicon-on-Insulator (SOI) MOS Transistors

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