Based on considerations of substrate charge, an increased drain saturation current for MOS transistors in Ultrathin silicon-on-insulator (SOI) films is predicted compared to similar transistors in bulk or thick SOI films. For typical parameters of a 200-A gate oxide with a channel doping of 4 x 1016 cm-3, the drain saturation current in Ultrathin SOI transistors is predicted to be ~40 percent larger than that of bulk structures. An increase of ~30 percent is seen in measurements made on devices in 1000-A SOI films.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering