Increased Drain Saturation Current in Ultrathin Silicon-on-Insulator (SOI) MOS Transistors

James C. Sturm; K. Tokunaga; Jean Pierre Colinge

doi:10.1109/55.6945

Increased Drain Saturation Current in Ultrathin Silicon-on-Insulator (SOI) MOS Transistors

James C. Sturm, K. Tokunaga, Jean Pierre Colinge

Research output: Contribution to journal › Article › peer-review

70 Scopus citations

Abstract

Based on considerations of substrate charge, an increased drain saturation current for MOS transistors in Ultrathin silicon-on-insulator (SOI) films is predicted compared to similar transistors in bulk or thick SOI films. For typical parameters of a 200-A gate oxide with a channel doping of 4 x 1016 cm-3, the drain saturation current in Ultrathin SOI transistors is predicted to be ~40 percent larger than that of bulk structures. An increase of ~30 percent is seen in measurements made on devices in 1000-A SOI films.

Original language	English (US)
Pages (from-to)	460-463
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	9
Issue number	9
DOIs	https://doi.org/10.1109/55.6945
State	Published - Sep 1988

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/55.6945

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