Abstract
Based on considerations of substrate charge, an increased drain saturation current for MOS transistors in Ultrathin silicon-on-insulator (SOI) films is predicted compared to similar transistors in bulk or thick SOI films. For typical parameters of a 200-A gate oxide with a channel doping of 4 x 1016 cm-3, the drain saturation current in Ultrathin SOI transistors is predicted to be ~40 percent larger than that of bulk structures. An increase of ~30 percent is seen in measurements made on devices in 1000-A SOI films.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 460-463 |
| Number of pages | 4 |
| Journal | IEEE Electron Device Letters |
| Volume | 9 |
| Issue number | 9 |
| DOIs | |
| State | Published - Sep 1988 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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Cite this
Sturm, J. C., Tokunaga, K., & Colinge, J. P. (1988). Increased Drain Saturation Current in Ultrathin Silicon-on-Insulator (SOI) MOS Transistors. IEEE Electron Device Letters, 9(9), 460-463. https://doi.org/10.1109/55.6945