Increased Drain Saturation Current in Ultrathin Silicon-on-Insulator (SOI) MOS Transistors

James C. Sturm, K. Tokunaga, Jean Pierre Colinge

Research output: Contribution to journalArticle

70 Scopus citations

Abstract

Based on considerations of substrate charge, an increased drain saturation current for MOS transistors in Ultrathin silicon-on-insulator (SOI) films is predicted compared to similar transistors in bulk or thick SOI films. For typical parameters of a 200-A gate oxide with a channel doping of 4 x 1016 cm-3, the drain saturation current in Ultrathin SOI transistors is predicted to be ~40 percent larger than that of bulk structures. An increase of ~30 percent is seen in measurements made on devices in 1000-A SOI films.

Original languageEnglish (US)
Pages (from-to)460-463
Number of pages4
JournalIEEE Electron Device Letters
Volume9
Issue number9
DOIs
StatePublished - Sep 1988

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Increased Drain Saturation Current in Ultrathin Silicon-on-Insulator (SOI) MOS Transistors'. Together they form a unique fingerprint.

  • Cite this