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Increase of SiC sublimation growth rate by optimizing of powder packaging
Xiaolin Wang
,
Dang Cai
, Hui Zhang
Research output
:
Contribution to journal
›
Article
›
peer-review
30
Scopus citations
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Dive into the research topics of 'Increase of SiC sublimation growth rate by optimizing of powder packaging'. Together they form a unique fingerprint.
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Keyphrases
Growth Rate
100%
Sublimation
100%
Silicon Carbide
100%
Sublimation Growth
100%
Vapor Transport
75%
Powder Charging
75%
Sublimation Rate
75%
Crystal Growth
50%
Growing System
50%
Porosity Evolution
50%
Particle Size
25%
Size Ratio
25%
Heat Mass Transfer
25%
Transport Mechanism
25%
Temperature Difference
25%
Evolutionary Rate
25%
Rate Variation
25%
Porous Powder
25%
Central Hole
25%
Induction Heating
25%
Powder Geometry
25%
Material Science
Silicon Carbide
100%
Sublimation Growth
100%
Crystal Growth
66%
Chemical Engineering
Silicon Carbide
100%
Induction Heating
33%
Engineering
Heat And Mass Transfer
50%