The use of infrared transmission to measure silicon wafer temperature in a lamp-heated susceptor-free reactor is described. The relevant temperature range is 400 to 800° C, and the accuracy is on the order of a few degrees centigrade. The method is then applied towards the growth of silicon and silicon-germanium alloy layers on silicon substrates. For silicon-germanium layers typical of those used in heterojunction bipolar transistors, no change in absorption compared to that of the silicon substrates is observed.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
- low temperature epitaxy
- temperature measurement