In situ temperature measurement by infrared absorption for low-temperature epitaxial growth of homo- and hetero-epitaxial layers on silicon

J. C. Sturm; P. V. Schwartz; P. M. Garone

doi:10.1007/BF02651980

In situ temperature measurement by infrared absorption for low-temperature epitaxial growth of homo- and hetero-epitaxial layers on silicon

J. C. Sturm, P. V. Schwartz, P. M. Garone

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4 Scopus citations

Abstract

The use of infrared transmission to measure silicon wafer temperature in a lamp-heated susceptor-free reactor is described. The relevant temperature range is 400 to 800° C, and the accuracy is on the order of a few degrees centigrade. The method is then applied towards the growth of silicon and silicon-germanium alloy layers on silicon substrates. For silicon-germanium layers typical of those used in heterojunction bipolar transistors, no change in absorption compared to that of the silicon substrates is observed.

Original language	English (US)
Pages (from-to)	1051-1054
Number of pages	4
Journal	Journal of Electronic Materials
Volume	19
Issue number	10
DOIs	https://doi.org/10.1007/BF02651980
State	Published - Oct 1990

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Keywords

Si-Ge
low temperature epitaxy
temperature measurement

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10.1007/BF02651980

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title = "In situ temperature measurement by infrared absorption for low-temperature epitaxial growth of homo- and hetero-epitaxial layers on silicon",

abstract = "The use of infrared transmission to measure silicon wafer temperature in a lamp-heated susceptor-free reactor is described. The relevant temperature range is 400 to 800° C, and the accuracy is on the order of a few degrees centigrade. The method is then applied towards the growth of silicon and silicon-germanium alloy layers on silicon substrates. For silicon-germanium layers typical of those used in heterojunction bipolar transistors, no change in absorption compared to that of the silicon substrates is observed.",

keywords = "Si-Ge, low temperature epitaxy, temperature measurement",

author = "Sturm, {J. C.} and Schwartz, {P. V.} and Garone, {P. M.}",

year = "1990",

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doi = "10.1007/BF02651980",

language = "English (US)",

volume = "19",

pages = "1051--1054",

journal = "Journal of Electronic Materials",

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T1 - In situ temperature measurement by infrared absorption for low-temperature epitaxial growth of homo- and hetero-epitaxial layers on silicon

AU - Sturm, J. C.

AU - Schwartz, P. V.

AU - Garone, P. M.

PY - 1990/10

Y1 - 1990/10

N2 - The use of infrared transmission to measure silicon wafer temperature in a lamp-heated susceptor-free reactor is described. The relevant temperature range is 400 to 800° C, and the accuracy is on the order of a few degrees centigrade. The method is then applied towards the growth of silicon and silicon-germanium alloy layers on silicon substrates. For silicon-germanium layers typical of those used in heterojunction bipolar transistors, no change in absorption compared to that of the silicon substrates is observed.

AB - The use of infrared transmission to measure silicon wafer temperature in a lamp-heated susceptor-free reactor is described. The relevant temperature range is 400 to 800° C, and the accuracy is on the order of a few degrees centigrade. The method is then applied towards the growth of silicon and silicon-germanium alloy layers on silicon substrates. For silicon-germanium layers typical of those used in heterojunction bipolar transistors, no change in absorption compared to that of the silicon substrates is observed.

KW - Si-Ge

KW - low temperature epitaxy

KW - temperature measurement

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JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 10

ER -

In situ temperature measurement by infrared absorption for low-temperature epitaxial growth of homo- and hetero-epitaxial layers on silicon

Abstract

All Science Journal Classification (ASJC) codes

Keywords

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