In situ temperature measurement by infrared absorption for low-temperature epitaxial growth of homo- and hetero-epitaxial layers on silicon

James Christopher Sturm, P. V. Schwartz, P. M. Garone

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

The use of infrared transmission to measure silicon wafer temperature in a lamp-heated susceptor-free reactor is described. The relevant temperature range is 400 to 800° C, and the accuracy is on the order of a few degrees centigrade. The method is then applied towards the growth of silicon and silicon-germanium alloy layers on silicon substrates. For silicon-germanium layers typical of those used in heterojunction bipolar transistors, no change in absorption compared to that of the silicon substrates is observed.

Original languageEnglish (US)
Pages (from-to)1051-1054
Number of pages4
JournalJournal of Electronic Materials
Volume19
Issue number10
DOIs
StatePublished - Oct 1 1990

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Electrical and Electronic Engineering

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